参数资料
型号: NAND512W4A0AV1F
厂商: NUMONYX
元件分类: PROM
英文描述: 32M X 16 FLASH 3V PROM, 35 ns, PDSO48
封装: 12 X 17 MM, 0.65 MM HEIGHT, ROHS COMPLIANT, PLASTIC, USOP-48
文件页数: 30/57页
文件大小: 916K
代理商: NAND512W4A0AV1F
NAND128-A, NAND256-A, NAND512-A, NAND01G-A
36/57
Table 19. DC Characteristics, 3V Devices
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
IDD1
Operating
Current
Sequential
Read
tRLRL minimum
E=VIL, IOUT = 0 mA
-
10
20
mA
IDD2
Program
-
10
20
mA
IDD3
Erase
-
10
20
mA
IDD4
Stand-by Current (TTL),
128Mb, 256Mb, 512Mb devices
E=VIH, WP=0V/VDD
-
1
mA
Stand-by Current (TTL)
512Mb and 1Gb Dual Die devices
-
2
mA
IDD5
Stand-By Current (CMOS)
128Mb, 256Mb, 512Mb devices
E=VDD-0.2,
WP=0/VDD
-
10
50
A
Stand-By Current (CMOS)
512Mb and 1Gb Dual Die devices
-
20
100
A
ILI
Input Leakage Current
VIN= 0 to VDDmax
-
±10
A
ILO
Output Leakage Current
VOUT= 0 to VDDmax
-
±10
A
VIH
Input High Voltage
-
2.0
-
VDD+0.3
V
VIL
Input Low Voltage
-
0.3
-
0.8
V
VOH
Output High Voltage Level
IOH = 400A
2.4
-
V
VOL
Output Low Voltage Level
IOL = 2.1mA
-
0.4
V
IOL (RB)
Output Low Current (RB)
VOL = 0.4V
8
10
mA
VLKO
VDD Supply Voltage (Erase and
Program lockout)
-
2.5
V
相关PDF资料
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NAND512W4A0AV1 32M X 16 FLASH 3V PROM, 35 ns, PDSO48
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NAND512R3A0CV1F 64M X 8 FLASH 1.8V PROM, 35 ns, PDSO48
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