参数资料
| 型号： | NB3RL02FCT2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/8页 |
| 文件大小： | 0K |
| 描述： | IC CLK BUFFER 1:2 52MHZ 8-WLCSP |
| 标准包装： | 1 |
| 类型： | 扇出缓冲器（分配） |
| 电路数： | 1 |
| 比率 - 输入:输出： | 1:2 |
| 差分 - 输入:输出： | 无/无 |
| 输入： | 时钟 |
| 输出： | LVCMOS |
| 频率 - 最大： | 52MHz |
| 电源电压： | 2.3 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-WFBGA，WLCSP |
| 供应商设备封装： | 8-WLCSP（1.57x.77） |
| 包装： | 标准包装 |
| 其它名称： | NB3RL02FCT2GOSDKR |
NB3RL02
http://onsemi.com
4
Table 5. ELECTRICAL CHARACTERISTICS (TA = 40°C to +85°C)
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
LDO
VOUT
LDO output voltage
IOUT = 50 mA
1.71
1.8
1.89
V
CLDO
External load capacitance
1
10
mF
IOUT(SC)
Short circuit output current
RL = 0 W
100
mA
IOUT(PK)
Peak output current
VBATT = 2.3 V, VLDO = VOUT 5%
55
100
mA
PSR
Power supply rejection
VBATT = 2.3V,
IOUT = 2 mA
fIN = 217 Hz
and 1 kHz
60
dB
fIN = 3.25 MHz
40
tsu
LDO startup time
VBATT = 2.3 V , CLDO = 1 mF, CLK_REQ_n
to VLDO = 1.71 V
0.2
ms
VBATT = 5.5 V , CLDO = 10 mF, CLK_REQ_n
to VLDO = 1.71 V
1
ms
POWER CONSUMPTION
ISB
Standby current
Device in standby (all VCLK_REQ_n = 0 V)
0.2
1
mA
ICCS
Static current consumption
Device active but not switching,
VCLK_REQn = H
0.4
1
mA
IOB
Output buffer average current
fIN = 26 MHz, CLOAD = 50 pF
4.2
mA
CPD
Output power dissipation
capacitance
fIN = 26 MHz
44
pF
MCLK_IN INPUT
II
MCLK_IN, CLK_REQ_1/2
leakage current
VI = VLDO or GND
1
mA
CI
MCLK_IN capacitance
fIN = 26 MHz
3.75
pF
RI
MCLK_IN impedance
fIN = 26 MHz
5
kW
fIN
MCLK_IN frequency range
10
26
52
MHz
MCLK_IN LVCMOS SOURCE
Phase noise
fIN = 26 MHz,
tr/tf v 1 ns
1 kHz offset
140
dBc/Hz
10 kHz offset
149
100 kHz offset
153
1 MHz offset
151
Additive jitter
fIN = 26 MHz, VPP = 0.8 V,
BW = 10 kHz 5 MHz
0.37
ps
(rms)
tDL
MCLK_IN to CLK_OUT_n
propagation delay
10
ns
DCL
Output duty cycle
fIN = 26 MHz, DCIN = 50%
45
50
55
%
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed
circuit board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the
declared operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device
specification limit values are applied individually under normal operating conditions and not valid simultaneously.
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