参数资料
| 型号： | NBSG86AMNR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/17页 |
| 文件大小： | 0K |
| 描述： | IC SMART GATE SIGE DIFF 16QFN |
| 产品变化通告： | LTB Notification 06/Feb/2008 |
| 标准包装： | 3,000 |
| 逻辑类型： | 可配置多功能 |
| 电路数： | 2 |
| 输入数： | 2 |
| 施密特触发器输入： | 无 |
| 输出类型： | 差分 |
| 电源电压： | 2.375 V ~ 3.465 V |
| 工作温度： | -40°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-VFQFN 裸露焊盘 |
| 供应商设备封装： | 16-QFN（3x3） |
| 包装： | 带卷 (TR) |
| 其它名称： | NBSG86AMNR2OSTR |
NBSG86A
http://onsemi.com
14
APPLICATION INFORMATION
All NBSG86A inputs can accept PECL, CML, LVTTL, LVCMOS and LVDS signal levels. The limitations for differential
input signal (LVDS, PECL, or CML) are minimum input swing of 75 mV and the maximum input swing of 2500 mV. Within
these conditions, the input voltage can range from VCC to 1.2 V. Examples interfaces are illustrated below in a 50 W
environment (Z = 50
W). For output termination and interface, refer to application note AND8020/D.
Table 14. INTERFACING OPTIONS
Interfacing Options
Connections
CML
LVDS
Connect VTD and VTD Together (See Figure 20)
ACCOUPLED
RSECL, PECL, NECL
Standard ECL Termination Techniques (See Figure 22)
LVTTL, LVCMOS
An External Voltage (VTHR) should be Applied to the Unused Complementary Differential Input. Nominal
VTHR is 1.5 V for LVTTL and VCC / 2 for LVCMOS Inputs. This Voltage must be within the
50 W
VCC
D
50 W
NBSG86A
VCC
VTD
VEE
VCC
Q
50 W 50 W
CML
Driver
VEE
Figure 18. CML Interface
Q
Z = 50 W
Figure 19. PECL Interface
50 W
VCC
PECL
Driver
D
50 W
NBSG86A
VEE
VBias*
VTD
VEE
RT
VEE
VCC
RT
5.0 V 290 W
3.3 V 150 W
2.5 V 80 W
Recommended RT Values
VTD
VCC
VTD
VBias*
Z = 50 W
C
*VBias must be within common mode range limits (VCMR)
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| NBSG86AMNR2G | 功能描述:逻辑门 2.5V/3.3V SiGe Diff Smart Gate RoHS:否 制造商:Texas Instruments 产品:OR 逻辑系列:LVC 栅极数量:2 线路数量（输入/输出）:2 / 1 高电平输出电流:- 16 mA 低电平输出电流:16 mA 传播延迟时间:3.8 ns 电源电压-最大:5.5 V 电源电压-最小:1.65 V 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:DCU-8 封装:Reel |
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