参数资料
型号: NCP1002PG
厂商: ON Semiconductor
文件页数: 4/14页
文件大小: 0K
描述: IC OFFLINE SWIT PWM UVLO HV 8DIP
产品变化通告: Product Obsolescence 01/Jul/2009
标准包装: 50
输出隔离: 隔离
频率范围: 90kHz ~ 115kHz
输入电压: 7.5 V ~ 10 V
输出电压: 700V
工作温度: -40°C ~ 125°C
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
其它名称: NCP1002PGOS
NCP1000, NCP1001, NCP1002
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Typ
Max
Unit
POWER SWITCH CIRCUIT
Power Switch Circuit On--State Resistance
NCP1000 (I D = 50 mA)
T J = 25 ? C
T J = 125 ? C (Note 8)
NCP1001 (I D = 100 mA)
T J = 25 ? C
T J = 125 ? C (Note 8)
NCP1002 (I D = 150 mA)
T J = 25 ? C
T J = 125 ? C (Note 8)
Power Switch Circuit Breakdown Voltage
(I D(off) = 100 m A, T J = 25 ? C)
Power Switch Circuit Off--State Leakage Current (V DS = 650 V)
T J = 25 ? C
T J = --40 ? C to 125 ? C
Switching Characteristics (V DS = 50 V, R L set for I D = 0.7 I Iim )
Turn--on Time (90% to 10%)
Turn--off Time (10% to 90%)
R (on)
V (BR)
I (off)
t on
t off
--
--
--
--
--
--
700
--
--
--
--
13
24
7.0
14
4.0
8.0
--
0.25
--
50
50
18
36
9.0
18
6.0
12
--
1.0
50
--
--
Ω
V
m A
ns
CURRENT LIMIT AND THERMAL PROTECTION
Current Limit Threshold (T J = 25 ? C) (Note 9)
NCP1000
NCP1001
NCP1002
Current Limit, Peak Switch Current
NCP1000 (di/dt = 100 mA/ m s)
NCP1001 (di/dt = 200 mA/ m s)
NCP1002 (di/dt = 300 mA/ m s)
Opto Fail--safe Protection (Figure 12)
T J = 25 ? C
T J = 0 ? C to 125 ? C
Propagation Delay, Current Limit Threshold to Power Switch Circuit Output
(Leading Edge Blanking plus Current Limit Delay)
Thermal Protection (Note 6, 8)
Shutdown (Junction Temperature Increasing)
Hysteresis (Junction Temperature Decreasing)
I lim
I pk
I Ofail
t PLH
t sd
t H
0.42
0.84
1.26
--
--
--
--
10
--
125
--
0.48
0.96
1.43
0.500
1.000
1.500
18
--
220
140
30
0.54
1.08
1.6
--
--
--
25
35
--
--
--
A
A
mA
ns
? C
TOTAL DEVICE (Pin 1)
Power Supply Current After UVLO Turn--On
mA
Power Switch Circuit Enabled
NCP1000
NCP1001
NCP1002
Power Switch Circuit Disabled
I CC1
I CC2
--
--
--
0.6
1.2
1.4
1.6
1.0
1.6
1.8
2.0
1.25
6. Maximum package power dissipation limits must be observed.
7. Tested junction temperature range for this device series:
T low = --40 ? C T high = +125 ? C
8. Guaranteed by design only.
9. Actual peak switch current is increased due to the propagation delay time and the di/dt (see Figure 16).
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