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参数资料
| 型号： | NCP1015ST100T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 15/22页 |
| 文件大小： | 0K |
| 描述： | IC OFFLINE SWIT SMPS CM SOT223 |
| 标准包装： | 1 |
| 输出隔离： | 隔离 |
| 频率范围： | 90kHz ~ 110kHz |
| 输入电压： | 8.1 V ~ 10 V |
| 输出电压： | 700V |
| 功率（瓦特）： | 19W |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 标准包装 |
| 其它名称： | NCP1015ST100T3GOSDKR |
NCP1015
350
250
150
50.0
> 0 !!
? 50.0
1.004M
1.011M
1.018M
1.025M
1.032M
Figure 25. The Drain ? Source Wave Shall Always be Positive . . .
V in
@ t off
t off +
N @ (V out ) V f )
V DRAIN(max) + V in ) N @ (V out ) V f ) ) I p @
L f
C tot
1 )
t sw + t off ) t on + L p @ I p @
1
N @ (V out ) V f )
V in
h + 2 @ L p @ I p @ f sw
P out 1 2
As a result, the Flyback voltage which is reflected on
the drain at the switch opening cannot be larger than
the input voltage. When selecting components, you
thus must adopt a turn ratio which adheres to the
following equation:
N @ (V out ) V f ) t V IN(min) (eq. 14)
For instance, if you operate from a 120 V dc rail and
you deliver 12 V, we can select a reflected voltage of
100 VDC maximum: 120 ? 100 > 0. Therefore, the
turn ratio Np : Ns must be smaller than 100 / (12 +
1) = 7.7 or Np : Ns < 7.7. We will see later on how
it affects the calculation.
2. Current ? mode architecture is, by definition,
sensitive to subharmonic oscillations.
Subharmonic oscillations only occur when the
SMPS is operating in Continuous Conduction
Mode (CCM) together with a duty ? cycle greater
than 50%. As a result, we recommend operating
the device in DCM only, whatever duty ? cycle it
implies (max. = 65%).
3. Lateral Mosfets have a poorly doped body ? diode
which naturally limits their ability to sustain the
avalanche. A traditional RCD clamping network
shall thus be installed to protect the MOSFET. In
some low power applications, a simple capacitor
can also be used since:
(eq. 15)
where L f is the leakage inductance, C tot the total
capacitance at the drain node (which is increased by
the capacitor you will wire between drain and
e.g. the V out target is almost reached and I p is still
pushed to the maximum.
Taking into account all previous remarks, it becomes
possible to calculate the maximum power that can be
transferred at low line:
When the switch closes, V in is applied across the primary
inductance L p until the current reaches the level imposed by
the feedback loop. The duration of this event is called the ON
time and can be defined by:
L p @ I p
t on + (eq. 16)
At the switch opening, the primary energy is transferred
to the secondary and the flyback voltage appears across L p ,
reseting the transformer core with a slope of:
N @ (V out ) V f )
L p
the t off time is thus:
L p @ I p
(eq. 17)
If one wants to keep DCM only, but still need to pass the
maximum power, we will not allow a dead ? time after the
core is reset, but rather immediately re ? start. The switching
time t sw can be expressed by:
(eq. 18)
The Flyback transfer formula dictates that:
(eq. 19)
which, by extracting I p and plugging into Equation 19 leads to:
1 )
2 @ P out 1
N @ (V out ) V f )
V in
h @ f sw @ L p
source), N the Np : Ns turn ratio, V out the output
voltage, V f the secondary diode forward drop and
finally, I p the maximum peak current. Worse case
occurs when the SMPS is very close to regulation,
t sw + L p @
Extracting L p from Equation 20 gives:
(eq. 20)
http://onsemi.com
15
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