参数资料
型号: NCP1027ATXGEVB
厂商: ON Semiconductor
文件页数: 16/30页
文件大小: 0K
描述: BOARD EVAL NCP1027 10W STANDBY
设计资源: NCP1027ATXGEVB Schematic
NCP1027ATXGEVB Test Procedure
NCP1027ATXGEVB Bill of Materials
标准包装: 1
主要目的: AC/DC,主面
输出及类型: 1,非隔离
功率 - 输出: 10W
输出电压: 5V
电流 - 输出: 2A
输入电压: 85 ~ 265VAC
稳压器拓扑结构: 回扫
频率 - 开关: 65kHz
板类型: 完全填充
已供物品:
已用 IC / 零件: NCP1027
其它名称: NCP1027ATXGEVB-ND
NCP1027ATXGEVBOS
NCP1027
Fault Condition – Low Input Voltage
The NCP1027 includes a brown-out circuitry able to
protect the power supply in case of low input voltage
conditions. Figure 30 shows how internally the NCP1027
monitors the voltage image of the bulk capacitor. Below a
given level, the controller blocks the driving pulses, above
it, it authorizes them. The internal circuitry, depicted by
Figure 30a, offers a way to observe the high-voltage (HV)
rail. A resistive divider made of R upper and R lower , brings
a portion of the HV rail on pin 3. Below the turn-on level,
the 10 m A current source IBO is off. Therefore, the turn-on
level solely depends on the division ratio brought by the
resistive divider.
16.0
160
1
vin
2
vcmp
Vbulk = 100 V
Vbulk = 70 V
12.0
120
Vbulk
V DD
Rupper
IBO
ON/OFF
8.00
80.0
BO
+
-
BO
4.00
40.0
Rlower
+
0
0
21
VBO
20.0u
60.0u
100u
140u
180u
Time in Seconds
Figure 30a. The internal brown-out
Figure 30b. Simulation results for 100/70 ON/OFF levels.
configuration with an offset current source.
Figure 30.
To the contrary, when the internal BO signal is high, the IBO source is activated and creates an hysteresis. As a result,
it becomes possible to select the turn-on and turn-off levels via a few lines of algebra.
IBO is Off
IBO is On
V( ) ) + Vbulk1
Rlower
Rlower ) Rupper
(eq. 1)
V( ) ) + Vbulk2
Rlower
Rlower ) Rupper
) IBO
Rlower  Rupper
Rlower ) Rupper
(eq. 2)
We can now extract R lower from Equation 1 and plug it into Equation 2, then solve for R upper :
Rupper + Rlower
Vbulk1- VBO
VBO
Rlower + VBO
Vbulk1- Vbulk2
IBO (Vbulk1- VBO)
If we decide to turn-on our converter for Vbulk1 equals 100 V and turn it off for Vbulk2 equals 70 V, then we obtain:
R upper = 3.0 M W
R lower = 18 k W
http://onsemi.com
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