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参数资料
| 型号： | NCP1027ATXGEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/30页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL NCP1027 10W STANDBY |
| 设计资源： | NCP1027ATXGEVB Schematic NCP1027ATXGEVB Test Procedure NCP1027ATXGEVB Bill of Materials |
| 标准包装： | 1 |
| 主要目的： | AC/DC，主面 |
| 输出及类型： | 1，非隔离 |
| 功率 - 输出： | 10W |
| 输出电压： | 5V |
| 电流 - 输出： | 2A |
| 输入电压： | 85 ~ 265VAC |
| 稳压器拓扑结构： | 回扫 |
| 频率 - 开关： | 65kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCP1027 |
| 其它名称： | NCP1027ATXGEVB-ND NCP1027ATXGEVBOS |
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NCP1027
MAXIMUM RATINGS
Rating
Power Supply Voltage on all Pins, Except Pin 5 (Drain)
Drain Voltage
Drain Current Peak During Transformer Saturation
Maximum Current into Pin 1 when Activating the 8.7 V Active Clamp
Thermal Resistance, Junction-to-Air – PDIP7
Thermal Resistance, Junction-to-Air – PDIP7 with 1.0 cm @ of 35 m Copper Area
Maximum Junction Temperature
Storage Temperature Range
ESD Capability, Human Body Model (HBM) (All Pins Except HV)
ESD Capability, Machine Model (MM)
Symbol
V CC
BVdss
IDS(pk)
I_V CC
R q JA
R q JA
TJ MAX
-
-
-
Value
-0.3 to 10
-0.3 to 700
1.8
15
100
75
150
-60 to +150
2.0
200
Unit
V
V
A
mA
° C/W
° C/W
° C
° C
kV
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V per Mil-Std-883, Method 3015.
Machine Model Method 200 V.
2. This device contains latchup protection and exceeds 100 mA per JEDEC Standard JESD78.
ELECTRICAL CHARACTERISTICS (For typical values T J = 25 ° C, for min/max values T J = 0 ° C to +125 ° C, Max T J = 150 ° C,
V CC = 8.0 V, unless otherwise noted.)
Characteristic
Pin
Symbol
Min
Typ
Max
Unit
SUPPLY SECTION AND V CC MANAGEMENT
V CC Increasing Level at which the Switcher Starts to Operate
V CC Decreasing Level at which the Switcher Stops Operation
Hysteresis between VCC ON and VCC (min)
Offset Voltage above VCC ON at which the Internal Clamp Activates
V CC Voltage at which the Internal Latch is Reset
1
1
-
1
1
VCC ON
VCC (min)
VCC hyste
VCC clamp
VCC reset
7.9
6.7
-
140
-
8.5
7.2
1.2
200
4.0
8.9
7.9
-
300
-
V
V
V
mV
V
Internal IC Consumption, MOSFET Switching at
65 kHz or 100 kHz
1
ICC1
-
1.4
1.9
mA
POWER SWITCH CIRCUIT
Power Switch Circuit On-State Resistance
5
R DS(on)
W
NCP1027 (Id = 100 mA)
T J = 25 ° C
T J = 125 ° C
-
-
5.8
9.8
7.0
11
Power Switch Circuit and Startup Breakdown Voltage
(ID (off) = 120 m A, T J = 25 ° C)
5
BVdss
700
-
-
V
Power Switch and Startup Breakdown Voltage Off-State
Idss(OFF)
m A
Leakage Current
T J = 25 ° C (Vds = 700 V)
T J = 125 ° C (Vds = 700 V)
5
5
-
-
50
30
-
-
Switching Characteristics (RL = 50 W , Vds Set for
Idrain = 0.7 x Ilim)
Turn-on Time (90%-10%)
Turn-of f Time (10%-90%)
5
5
t on
t off
-
-
35
35
-
-
ns
ns
INTERNAL STARTUP CURRENT SOURCE
High-Voltage Current Source, V CC = VCC ON – 200 mV
High-Voltage Current Source, V CC = 0
V CC Transition Level for IC1 to IC2 Toggling Point
1
1
1
IC1
IC2
V CCTh
3.5
350
-
6.0
650
1.3
8.0
900
-
mA
m A
V
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