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参数资料
| 型号： | NCP1203GEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 14/16页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR NCP1203G |
| 设计资源： | NCP1203GEVB BOM NCP1203GEVB Gerber Files NCP1203 EVB Schematic |
| 标准包装： | 1 |
| 主要目的： | AC/DC，主面 |
| 输出及类型： | 1，隔离 |
| 输出电压： | 19V |
| 电流 - 输出： | 4A |
| 输入电压： | 85 ~ 230VAC |
| 稳压器拓扑结构： | 回扫 |
| 频率 - 开关： | 60kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NPC1200 |
| 其它名称： | NCP1203GEVBOS |
NCP1200
If the leakage inductance is kept low, the MTD1N60E can
withstand accidental avalanche energy, e.g. during a
high ? voltage spike superimposed over the mains, without
the help of a clamping network. If this leakage path
permanently forces a drain ? source voltage above the
MOSFET BVdss (600 V), a clamping network is mandatory
V ripple : the clamping ripple, could be around 20 V
Another option lies in implementing a snubber network
which will damp the leakage oscillations but also provide
more capacitance at the MOSFET’s turn ? off. The peak
voltage at which the leakage forces the drain is calculated
by:
leak
lump
and must be built around Rclamp and Clamp. Dclamp shall
react extremely fast and can be a MUR160 type. To calculate
the component values, the following formulas will help you:
V max + Ip @
L
C
out ) Vf sec) @ N)
clamp
clamp
leak
clamp
clamp
V
@ Fsw @ R
R clamp =
2 @ V @ (V * (V
L @ Ip 2 @ Fsw
V
C +
ripple clamp
with:
V clamp : the desired clamping level, must be selected to be
between 40 V to 80 V above the reflected output voltage
when the supply is heavily loaded.
V out + Vf : the regulated output voltage level + the secondary
diode voltage drop
L leak : the primary leakage inductance
N : the Ns:Np conversion ratio
F SW : the switching frequency
ORDERING INFORMATION
where C lump represents the total parasitic capacitance seen
at the MOSFET opening. Typical values for Rsnubber and
Csnubber in this 4W application could respectively be 1.5
k W and 47 pF. Further tweaking is nevertheless necessary to
tune the dissipated power versus standby power.
Available Documents
“Implementing the NCP1200 in Low ? cost AC ? DC
Converters”, AND8023/D.
“Conducted EMI Filter Design for the NCP1200’’,
AND8032/D.
“Ramp Compensation for the NCP1200’’, AND8029/D.
TRANSient and AC models available to download at:
http://onsemi.com/pub/NCP1200
NCP1200 design spreadsheet available to download at:
http://onsemi.com/pub/NCP1200
Device
NCP1200P40G
NCP1200D40R2G
Type
F SW = 40 kHz
Marking
1200P40
200D4
Package
PDIP ? 8
(Pb ? Free)
SOIC ? 8
Shipping ?
50 Units / Rail
2500 / Tape & Reel
(Pb ? Free)
NCP1200P60G
1200P60
PDIP ? 8
50 Units / Rail
NCP1200D60R2G
F SW = 60 kHz
200D6
(Pb ? Free)
SOIC ? 8
2500 / Tape & Reel
(Pb ? Free)
NCP1200P100G
1200P100
PDIP ? 8
50 Units / Rail
NCP1200D100R2G
F SW = 100 kHz
200D1
(Pb ? Free)
SOIC ? 8
2500 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
14
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP1203P100 | 功能描述:电流型 PWM 控制器 100KHz Current Mode RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| NCP1203P100G | 功能描述:电流型 PWM 控制器 100KHz Current Mode SMPS PWM RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| NCP1203P40 | 功能描述:交流/直流开关转换器 40KHz Current Mode RoHS:否 制造商:STMicroelectronics 输出电压:800 V 输入/电源电压（最大值）:23.5 V 输入/电源电压（最小值）:11.5 V 开关频率:115 kHz 电源电流:1.6 mA 工作温度范围:- 40 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SSO-10 封装:Reel |
| NCP1203P40G | 功能描述:电流型 PWM 控制器 40KHz Current Mode SMPS PWM RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
| NCP1203P60 | 功能描述:电流型 PWM 控制器 60KHz Current Mode RoHS:否 制造商:Texas Instruments 开关频率:27 KHz 上升时间: 下降时间: 工作电源电压:6 V to 15 V 工作电源电流:1.5 mA 输出端数量:1 最大工作温度:+ 105 C 安装风格:SMD/SMT 封装 / 箱体:TSSOP-14 |
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