参数资料
| 型号： | NCP1379DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/22页 |
| 文件大小： | 0K |
| 描述： | IC CTLR QUASI CURRENT MODE 8SOIC |
| 标准包装： | 2,500 |
| 输出隔离： | 隔离 |
| 输入电压： | 9 V ~ 28 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NCP1379
MAXIMUM RATINGS TABLE(S)
Symbol
V CC(MAX)
I CC(MAX)
V DRV(MAX)
I DRV(MAX)
V MAX
I MAX
I ZCD(MAX)
R q JA
T J(MAX)
Rating
Maximum Power Supply voltage, VCC pin, continuous voltage
Maximum current for VCC pin
Maximum driver pin voltage, DRV pin, continuous voltage
Maximum current for DRV pin
Maximum voltage on low power pins (except pins DRV and V CC )
Current range for low power pins (except pins ZCD, DRV and V CC )
Maximum current for ZCD pin
Thermal Resistance Junction ? to ? Air
Maximum Junction Temperature
Operating Temperature Range
Storage Temperature Range
ESD Capability, Human Body Model (HBM) model (Note 1)
ESD Capability, CDM model (Note 1)
Value
? 0.3 to 28
$ 30
? 0.3 to 20
$ 1000
? 0.3 to 10
$ 10
+3 / ? 2
120
150
? 40 to +125
? 60 to +150
4
2
Unit
V
mA
V
mA
V
mA
mA
° C/W
° C
° C
° C
kV
kV
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. This device series contains ESD protection and exceeds the following tests: Human Body Model 4000 V per JEDEC Standard JESD22,
Method A114E. Charged Device Model 2000 V per JEDEC Standard JESD22 ? C101D
2. This device contains latchup protection and exceeds 100 mA per JEDEC Standard JESD78.
ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values T J = 25 ° C, V CC = 12 V, V ZCD = 0 V, V FB = 3 V,
V CS = 0 V, V fault = 1.5 V, C T = 680 pF) For min/max values T J = ? 40 ° C to +125 ° C, Max T J = 150 ° C, V CC = 12 V)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
SUPPLY SECTION ? STARTUP AND SUPPLY CIRCUITS
V CC(on)
V CC(off)
V CC(hyst)
V CC(reset)
t VCC(off)
t VCC(reset)
I CC(start)
I CC1
I CC2
I CC3A
I CC3B
Supply Voltage
Startup Threshold
Minimum Operating Voltage
Hysteresis V CC(on) ? V CC(off)
Internal logic reset
V CC(off) noise filter
V CC(reset) noise filter
Startup current
Supply Current
Device Disabled/Fault (Note 3)
Device Enabled/No output load on pin 5
Device Switching (F sw = 65 kHz)
Device Switching (F sw around 12 kHz)
V CC increasing
V CC decreasing
V CC decreasing
FB pin open
V CC = V CC(on) ? 0.5 V
V CC > V CC(off)
F sw = 10 kHz
C DRV = 1 nF, F sw = 65 kHz
C DRV = 1 nF, V FB = 1.25 V
10.5
8.3
2.0
6
?
?
?
?
?
?
?
11.4
9.0
2.4
7
5
20
0.7
1.7
1.7
2.65
2.0
12.3
9.4
?
8
?
?
1.2
2.0
2.0
3.00
?
V
m s
m s
mA
mA
CURRENT COMPARATOR ? CURRENT SENSE
V ILIM
t LEB
I bias
t ILIM
I peak(VCO)
Current Sense Voltage Threshold
Leading Edge Blanking Duration for V ILIM
Input Bias Current (Note 3)
Propagation Delay
Percentage of maximum peak current level at which
VCO takes over (Note 4)
V FB = 4 V, V CS increasing
Minimum on time minus
t ILIM
DRV high
V CS > V ILIM to DRV
turn ? off
V FB = 0.4 V, V CS
increasing
0.76
210
? 2
?
15.4
0.80
275
?
125
17.5
0.84
330
2
175
19.6
V
ns
m A
ns
%
Guaranteed by design
The peak current setpoint goes down as the load decreases. It is frozen below I peak(VCO) (I peak = cst)
If negative voltage in excess to ? 300 mV is applied to ZCD pin, the current setpoint decrease is no longer guaranteed to be linear
Minimum value for T J = 125 ° C
http://onsemi.com
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