参数资料
| 型号： | NCP1379DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/22页 |
| 文件大小： | 0K |
| 描述： | IC CTLR QUASI CURRENT MODE 8SOIC |
| 标准包装： | 2,500 |
| 输出隔离： | 隔离 |
| 输入电压： | 9 V ~ 28 V |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NCP1379
ELECTRICAL CHARACTERISTICS (Unless otherwise noted: For typical values T J = 25 ° C, V CC = 12 V, V ZCD = 0 V, V FB = 3 V,
V CS = 0 V, V fault = 1.5 V, C T = 680 pF) For min/max values T J = ? 40 ° C to +125 ° C, Max T J = 150 ° C, V CC = 12 V)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
CURRENT COMPARATOR ? CURRENT SENSE
V OPP(MAX)
V CS(stop)
t BCS
Setpoint decrease for V ZCD = ? 300 mV (Note 5)
Threshold for immediate fault protection activation
Leading Edge Blanking Duration for V CS(stop)
V ZCD = ? 300 mV, V FB =
4 V, V CS increasing
35.0
1.125
?
37.5
1.200
120
40.0
1.275
?
%
V
ns
DRIVE OUTPUT ? GATE DRIVE
R SNK
R SRC
I SNK
I SRC
t r
t f
V DRV(low)
V DRV(high)
Drive Resistance
DRV Sink
DRV Source
Drive current capability
DRV Sink
DRV Source
Rise Time (10 % to 90 %)
Fall Time (90 % to 10 %)
DRV Low Voltage
DRV High Voltage (Note 6)
V DRV = 10 V
V DRV = 2 V
V DRV = 10 V
V DRV = 2 V
C DRV = 1 nF, V DRV from 0
to 12 V
C DRV = 1 nF, V DRV from 0
to 12 V
V CC = V CC(off) + 0.2 V
C DRV = 1 nF, R DRV =33 k W
V CC = V CC(MAX)
C DRV = 1 nF
?
?
?
?
?
?
8.4
10.5
12.5
20
800
500
40
25
9.1
13.0
?
?
?
?
75
60
?
15.5
W
mA
ns
ns
V
V
DEMAGNETIZATION INPUT ? ZERO VOLTAGE DETECTION CIRCUIT
V ZCD(TH)
V ZCD(HYS)
V CH
V CL
t DEM
C PAR
t BLANK
t outSS
t out
R ZCD(pdown)
ZCD threshold voltage
ZCD hysteresis
Input clamp voltage
High state
Low state
Propagation Delay
Internal input capacitance
Blanking delay after on ? time
Timeout after last demag transition
Pulldown resistor (Note 3)
V ZCD decreasing
V ZCD increasing
I pin1 = 3.0 mA
I pin1 = ? 2.0 mA
V ZCD decreasing from 4 V
to ? 0.3 V
During soft ? start
After the end of soft ? start
35
15
8
? 0.9
?
?
2.30
28
5.0
140
55
35
10
? 0.7
150
10
3.15
41
5.9
320
90
55
12
? 0.3
250
?
4.00
54
6.7
700
mV
mV
V
ns
pF
m s
m s
k W
TIMING CAPACITOR ? TIMING CAPACITOR
V CT(MAX)
I CT
V CT(MIN)
Maximum voltage on C T pin
Source current
Minimum voltage on C T pin, discharge switch
activated
V FB < V FB(TH)
V CT = 0 V
5.15
18
?
5.40
20
?
5.65
22
90
V
m A
mV
C T
Recommended timing capacitor value
220
pF
FEEDBACK SECTION ? FEEDBACK
R FB(pullup)
I ratio
V FB(TH)
Internal pullup resistor
Pin FB to current setpoint division ratio
FB pin threshold under which C T is clamped to
V CT(MAX)
15
3.8
0.26
18
4.0
0.30
22
4.2
0.34
k W
V
Guaranteed by design
The peak current setpoint goes down as the load decreases. It is frozen below I peak(VCO) (I peak = cst)
If negative voltage in excess to ? 300 mV is applied to ZCD pin, the current setpoint decrease is no longer guaranteed to be linear
Minimum value for T J = 125 ° C
http://onsemi.com
5
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