参数资料
| 型号： | NCP1380BDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 8/26页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR FLYBK ISO PWM 8SOIC |
| 产品变化通告： | NCP1380 Pulldown Resistor Spec Change 01/Jul/2011 |
| 标准包装： | 2,500 |
| PWM 型： | 电流模式 |
| 输出数： | 1 |
| 电源电压： | 9 V ~ 28 V |
| 降压： | 无 |
| 升压： | 无 |
| 回扫： | 是 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 是 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
| 其它名称： | NCP1380BDR2G-ND NCP1380BDR2GOSTR |
NCP1380
ELECTRICAL CHARACTERISTICS (continued) (Unless otherwise noted: For typical values T J = 25 ° C, V CC = 12 V, V ZCD = 0 V,
V FB = 3 V, V CS = 0 V, V fault = 1.5 V, C T = 680 pF) For min/max values T J = ?40 ° C to +125 ° C, Max T J = 150 ° C, V CC = 12 V)
Symbol
Condition
Min
Typ
Max
Unit
FEEDBACK SECTION
Valley threshold
V
V H2D
FB voltage where 1 st valley ends and 2 nd valley
V FB decreases
1.316
1.4
1.484
starts
V H3D
FB voltage where 2 nd valley ends and 3 rd valley
V FB decreases
1.128
1.2
1.272
starts
V H4D
FB voltage where 3 rd valley ends and 4 th valley
V FB decreases
0.846
0.9
0.954
starts
V HVCOD
V HVCOI
V H4I
FB voltage where 4 th valley ends and VCO starts
FB voltage where VCO ends and 4 th valley starts
FB voltage where 4 th valley ends and 3 rd valley
V FB decreases
V FB increases
V FB increases
0.732
1.316
1.504
0.8
1.4
1.6
0.828
1.484
1.696
starts
V H3I
FB voltage where 3 rd valley ends and 2 nd valley
V FB increases
1.692
1.8
1.908
starts
V H2I
FB voltage where 2 nd valley ends and 1 st valley
V FB increases
1.880
2.0
2.120
starts
FAULT PROTECTION (ALL VERSIONS)
T SHDN
Thermal Shutdown
Device switching (F SW
140
?
170
° C
around 65 kHz)
T SHDN(HYS)
Thermal Shutdown Hysteresis
?
40
?
° C
t OVLD
t SSTART
Overload Timer
Soft?start duration
V FB = 4 V, V CS > V ILIM
V FB = 4 V, V CS ramping up,
measured from 1 st DRV
75
2.8
85
3.8
95
4.8
ms
ms
pulse to V CS(peak) = 90% of
V ILIM
R Fault(clamp)
Clamp series resistor
1.3
1.55
1.8
k W
V OVP
t latch(delay)
Fault detection level for OVP
Delay before latch confirmation
V Fault increasing
2.35
22.5
2.5
30
2.65
37.5
V
m s
FAULT PROTECTION A & B VERSIONS
I OTP(REF)
Reference current for direct connection of an
V Fault = V OTP + 0.2 V
85
91
97
m A
NTC (Note 7)
V OTP
V Fault(clamp)
Fault detection level for OTP
Clamped voltage (Fault pin left open)
V Fault decreasing
Fault pin open
0.744
1.13
0.8
1.35
0.856
1.57
V
V
FAULT PROTECTION C & D VERSIONS
V BO
I BO
t BO(delay)
V Fault(clamp)
Brown?Out level
Sourced hysteresis current V Fault > V BO
Delay before entering and exiting Brown?out
Clamped voltage (Fault pin left open)
V Fault decreasing
V Fault = V BO + 0.2 V
Fault pin open
0.744
9
22.5
1.0
0.8
10
30
1.2
0.856
11
37.5
1.4
V
m A
m s
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Guaranteed by design.
4. The peak current setpoint goes down as the load decreases. It is frozen below I peak(VCO) (I peak = cst)
5. If negative voltage in excess to ?300 mV is applied to ZCD pin, the current setpoint decrease is no longer guaranteed to be linear
6. Minimum value for T J = 125 ° C
7. NTC with R 110 = 8.8 k W .
http://onsemi.com
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