参数资料
| 型号： | NCP1579DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 10/11页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 8-SOIC |
| 标准包装： | 1 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 317kHz |
| 占空比： | 80% |
| 电源电压： | 4.5 V ~ 13.2 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | 0°C ~ 70°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 标准包装 |
| 其它名称： | NCP1579DR2GOSDKR |
NCP1579
P IC = control IC power dissipation,
I CC = IC measured supply current,
V CC = IC supply voltage,
P TG = top gate driver losses,
P BG = bottom gate driver losses.
The upper (switching) MOSFET gate driver losses are:
NCP1579
P TG + Q TG
f SW
V BST
Where:
Q TG = total upper MOSFET gate charge at VBST,
f SW = the switching frequency,
V BST = the BST pin voltage.
The lower (synchronous) MOSFET gate driver losses are:
Figure 12. Components to be Considered for
Layout Specifications
P BG + Q BG
f SW
V CC
Where:
Q BG = total lower MOSFET gate charge at V CC .
The junction temperature of the control IC can then be
calculated as:
T J + T A ) P IC
q JA
Where:
T J = the junction temperature of the IC,
T A = the ambient temperature,
θ JA = the junction ? to ? ambient thermal resistance of the
IC package.
The package thermal resistance can be obtained from the
specifications section of this data sheet and a calculation can
be made to determine the IC junction temperature. However,
it should be noted that the physical layout of the board, the
proximity of other heat sources such as MOSFETs and
inductors, and the amount of metal connected to the IC,
impact the temperature of the device. Use these calculations
as a guide, but measurements should be taken in the actual
application.
Layout Considerations
As in any high frequency switching converter, layout is
very important. Switching current from one power device to
another can generate voltage transients across the
impedances of the interconnecting bond wires and circuit
traces. These interconnecting impedances should be
minimized by using wide, short printed circuit traces. The
critical components should be located as close together as
possible using ground plane construction or single point
grounding. The figure below shows the critical power
components of the converter. To minimize the voltage
overshoot the interconnecting wires indicated by heavy lines
should be part of ground or power plane in a printed circuit
board. The components shown in the figure below should be
located as close together as possible. Please note that the
capacitors C IN and C OUT each represent numerous physical
capacitors. It is desirable to locate the NCP1579 within 1
inch of the MOSFETs, Q1 and Q2. The circuit traces for the
MOSFETs’ gate and source connections from the NCP1579
must be sized to handle up to 2 A peak current.
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| NCP1580DR2 | 功能描述:电压模式 PWM 控制器 Low Voltage RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| NCP1580DR2G | 功能描述:电压模式 PWM 控制器 Low Voltage Synchronous Buck RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| NCP1581DR2G | 功能描述:电压模式 PWM 控制器 SYNCHRONOUS PWM BUCK CONV RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| NCP1581SBCKRGEVB | 功能描述:BOARD EVAL NCP1581 RoHS:是 类别:编程器，开发系统 >> 评估板 - DC/DC 与 AC/DC（离线）SMPS 系列:* 产品培训模块:Obsolescence Mitigation Program 标准包装:1 系列:True Shutdown™ 主要目的:DC/DC，步升 输出及类型:1，非隔离 功率 - 输出:- 输出电压:- 电流 - 输出:1A 输入电压:2.5 V ~ 5.5 V 稳压器拓扑结构:升压 频率 - 开关:3MHz 板类型:完全填充 已供物品:板 已用 IC / 零件:MAX8969 |
| NCP1582ADR2G | 功能描述:电压模式 PWM 控制器 BUCK CONTROLLER RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
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