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参数资料
| 型号： | NCP1601ADR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/19页 |
| 文件大小： | 257K |
| 描述： | IC CTRLR PFC FREQ DCM/CRM 8SOIC |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 1 |
| 模式： | 临界传导（CRM），间歇式（转换） |
| 频率 - 开关： | 58kHz |
| 电流 - 启动： | 17µA |
| 电源电压： | 12.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NCP1601ADR2OSCT |
NCP1601A, NCP1601B
http://onsemi.com
5
ELECTRICAL CHARACTERISTICS (For typical values T
J
= 25癈. For min/max values, T
J
= - -40癈 to +125癈, V
CC
= 15 V,
V
control
= 100 nF, Ramp = 100 pF, Osc = 220 pF unless otherwise specified)
Characteristic
Pin
Symbol
Min
Typ
Max
Unit
OSCILLATOR
Oscillator Frequency (Osc = 220 pF to GND)
5
f
osc
52
58
64
kHz
Internal Capacitance of the Oscillator Pin
5
C
osc(int)
- -
36
- -
pF
Maximum Oscillator Switching Frequency
5
f
osc(max)
- -
405
- -
kHz
Oscillator Discharge Current (Osc = 5.5 V)
5
I
odch
40
49
60
mA
Oscillator Charge Current (Osc = 3 V)
5
I
och
40
45
60
mA
Comparator Lower Threshold (Osc = 220 pF to GND) (Note 3)
5
V
sync(L)
3.0
3.5
4.0
V
Comparator Upper Threshold (Osc = 220 pF to GND)
5
V
sync(H)
4.5
5
5.5
V
Synchronization Pulse Width for Detection
5
t
sync(min)
500
- -
- -
ns
Synchronization Propagation Delay
5
t
sync(d)
- -
371
- -
ns
GATE DRIVE
Gate Drive Resistor
Output High and Draw 100 mA out of Drv Pin (I
source
= 100 mA)
Output Low and Insert 100 mA into Drv Pin (I
sink
= 100 mA)
7
R
OH
R
OL
5
2
11.6
7.2
20
18
?/DIV>
?/DIV>
Gate Drive Rise Time from 1.5 V to 13.5 V (Drv = 1 nF to GND)
7
t
r
- -
53
- -
ns
Gate Drive Fall Time from 13.5 V to 1.5 V (Drv = 1 nF to GND)
7
t
f
- -
32
- -
ns
FEEDBACK / OVERVOLTAGE PROTECTION / UNDERVOLTAGE PROTECTION
Reference Current
1
I
ref
192
203
208
mA
Regulation Block Ratio
1
I
regL
/ I
ref
95
96
97
%
V
control
Pin Internal Resistor
2
R
control
- -
300
- -
k?/DIV>
Maximum Control Voltage (I
FB
= 100 mA)
2
V
control(max)
0.95
1.05
1.15
V
Feedback Pin Voltage (I
FB
= 100 mA)
1
V
FB1
- -
3
- -
V
Overvoltage Protection Current Ratio
1
I
OVP
/ I
ref
104
107
- -
%
Overvoltage Protection Current
1
I
OVP
- -
217
225
mA
Undervoltage Protection Current Ratio
1
I
UVP
/ I
ref
4
8
15
%
CURRENT SENSE
Current Sense Pin Offset Voltage (I
S
= 100 mA)
4
V
S
- -
4
- -
mV
Overcurrent Protection Level
4
I
S(OCP)
190
203
210
mA
Current Sense Pin Offset Voltage at Overcurrent Level
4
V
S(OCP)
0
3.2
20
mV
Zero Current Detection Level
4
I
S(ZCD)
9
14
19
mA
Current Sense Pin Offset Voltage at Zero Current Level
4
V
S(ZCD)
0
7.5
20
mV
Zero Current Sense Resistor (R
S(ZCD)
= V
S(ZCD)
/ I
S(ZCD)
)
4
R
S(ZCD)
- -
0.536
1
k?/DIV>
RAMP
Charging Current (Ramp = 0 V)
3
I
ch
95
100
105
mA
Maximum Power Resistance (R
power
= V
control(max)
/ I
ch
)
3
R
power
9.5
10.5
11.5
k?/DIV>
Internal Clamping of Voltage V
ton
- -
V
ton(max)
- -
3.9
- -
V
Internal Capacitance of the Ramp Pin
3
C
ramp(int)
- -
20
- -
pF
Ramp Pin Sink Resistance (Osc = 0 V, Ramp = 1 mA sourcing)
3
R
ramp
- -
71.5
- -
?/DIV>
THERMAL SHUTDOWN
Thermal Shutdown Threshold (Note 4)
- -
T
SD
140
- -
- -
癈
Thermal Shutdown Hysteresis
- -
T
H
- -
45
- -
癈
2. Comparator lower threshold is also the synchronization threshold.
3. Guaranteed by design.
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