参数资料
| 型号： | NCP1608BOOSTGEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 15/24页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL NCP1608 100W BOOST |
| 设计资源： | NCP1608BOOSTGEVB Schematic NCP1608BOOSTGEVB Gerber Files NCP1608BOOSTGEVB Bill of Materials |
| 标准包装： | 1 |
| 主要目的： | 电源管理，功率因数校正 |
| 嵌入式： | 否 |
| 已用 IC / 零件： | NCP1608 |
| 主要属性： | 100 W，85 ~ 265 VAC 输入，400 VDC 稳压输出 |
| 已供物品： | 板 |
| 其它名称： | NCP1608BOOSTGEVB-ND NCP1608BOOSTGEVBOS |
NCP1608
V in
N B
N ZCD
+
?
S
Q
Reset
Demag
R sense
V ZCD(ARM)
+
?
DRIVE
Dominant
Latch
R Q
V ZCD(TRIG)
ZCD
R ZCD
ZCD Clamp
Figure 33. Implementation of the ZCD Block
I L
This sequence achieves CrM operation. The maximum
V ZCD(ARM) sets the maximum turns ratio and is calculated
using Equation 11:
MOSFET Conduction
Diode Conduction
t z
N B : N ZCD v
V ZCD(ARM)
V out * 2 @ Vac HL
(eq. 11)
Where Vac HL is the maximum rms input voltage and
V ZCD(ARM) = 1.55 V (maximum value).
The NCP1608 prevents excessive voltages on the ZCD
pin by clamping V ZCD . When the ZCD winding is negative,
the ZCD pin is internally clamped to V CL(NEG) . Similarly,
when the ZCD winding is positive, the ZCD pin is
internally clamped to V CL(POS) . A resistor (R ZCD in
Figure 33) is necessary to limit the current into the ZCD
pin. The maximum ZCD pin current (I ZCD(MAX) ) is limited
to less than 10 mA. R ZCD is calculated using Equation 12:
I L(peak)
I L(NEG)
DRV
V drain
V out
V ZCD(WIND)
V ZCD(WIND),off
0A
0V
0V
Minimum Voltage Turn on
0V
R ZCD w
2 @ Vac HL
I ZCD(MAX) @ (N B : N ZCD )
(eq. 12)
The value of R ZCD and the parasitic capacitance of the
ZCD pin determine when the ZCD winding signal is
detected and the drive turn on begins. A large R ZCD value
creates a long delay before detecting the ZCD event. In this
case, the controller operates in DCM and the power factor
is reduced. If the R ZCD value is too small, the drive turns
on when the drain voltage is high and efficiency is reduced.
V ZCD(WIND),on
V ZCD
V CL(POS)
V ZCD(ARM)
V ZCD(TRIG)
V CL(NEG)
t on
t diode
t off
R ZCD Delay
0V
A popular strategy for selecting R ZCD is to use the R ZCD
value that achieves minimum drain voltage turn on. This
value is found experimentally. Figure 34 shows the realistic
waveforms for CrM operation due to R ZCD and the ZCD pin
capacitance.
T SW
Figure 34. Realistic CrM Waveforms Using a ZCD
Winding with R ZCD and the ZCD Pin Capacitance
http://onsemi.com
15
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