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参数资料
| 型号： | NCP3011GEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 19/28页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL NCP3011 BUCK CTLR |
| 设计资源： | NCP3011GEVB Schematic NCP3011GEVB Gerber Files NCP3011GEVB Bill of Materials |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 3.3V |
| 电流 - 输出： | 10A |
| 输入电压： | 9 ~ 18 V |
| 稳压器拓扑结构： | 降压 |
| 频率 - 开关： | 400kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCP3011 |
| 其它名称： | NCP3011GEVB-ND NCP3011GEVBOS |
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NCP3011, NCV3011
Reduced sampling time occurs at high duty cycles where
the low side MOSFET is off for the majority of the switching
period. Reduced sampling time causes errors in the
regulated voltage on the boost pin. High duty cycle / input
voltage induced sampling errors can result in increased
boost ripple voltage or higher than desired DC boost voltage.
Figure 39 outlines all operating regions.
The recommended operating conditions are shown in
Region 1 (Green) where a 0.1 m F, 25 V ceramic capacitor
can be placed on the boost pin without causing damage to the
device or MOSFETS. Larger boost ripple voltage occurring
The boost ripple frequency is dependent on the output
capacitance selected. The ripple voltage will not damage the
device or $ 12 V gate rated MOSFETs.
Conditions where maximum boost ripple voltage could
damage the device or $ 12 V gate rated MOSFETs can be
seen in Region 3 (Orange). Placing a boost capacitor that is
no greater than 10X the input capacitance of the high side
MOSFET on the boost pin limits the maximum boost
voltage < 12 V. The typical drive waveforms for Regions 1,
2 and 3 (green, yellow, and orange) regions of Figure 39 are
shown in Figure 40.
over several switching cycles is shown in Region 2 (Yellow).
Boost Voltage Levels
Normal Operation
Increased Boost Ripple
(Still in Specification)
Increased Boost Ripple
Capacitor Optimization
Required
28
26
24
22
20
22V
Region 3
18
16
14
Region 1
Region 2
Max
Maxi
mum
Duty
Cycle
12
10
8
6
4
11.5V
71%
2
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
Duty Cycle
Figure 39. Safe Operating Area for Boost Voltage with a 0.1 m F Capacitor
http://onsemi.com
19
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| NCP3012 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Synchronous PWM Controller |
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| NCP301HSN09T1G | 功能描述:电压监测器/监控器 0.9V Detector w/Reset High RoHS:否 制造商:Texas Instruments 监测电压数:2 监测电压:Adjustable 输出类型:Open Drain 欠电压阈值: 过电压阈值: 准确性:1 % 工作电源电压:1.5 V to 6.5 V 工作电源电流:1.8 uA 最大工作温度:+ 125 C 封装 / 箱体:SON-6 安装风格:SMD/SMT |
| NCP301HSN10T1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Voltage Detector Series |
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