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参数资料
| 型号： | NCP3101BUCK1GEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 16/26页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR NCP3101BUCK1G |
| 设计资源： | NCP3101BUCK1 EVB BOM NCP3101BUCKL1GEVB Gerber Files NCP3101BUCK1 EVB Schematic |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 3.3V |
| 电流 - 输出： | 6A |
| 输入电压： | 13.2V |
| 稳压器拓扑结构： | 降压 |
| 频率 - 开关： | 275kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCP3101 |
| 其它名称： | NCP3101BUCK1GEVBOS |
NCP3101C
1
+ @ I OUT @ V IN @ F SW @ t RISE ) t FALL
@ C OSS @ V IN 2 @ F SW
P DS +
1
P SW_TOT = High side MOSFET total switching
losses
The first term for total switching losses from Equation 24
are the losses associated with turning the high ? side
MOSFET on and off and the corresponding overlap in drain
voltage and current.
P SW + P TON ) P TOFF
(eq. 25)
2
F SW = Switching frequency
I OUT = Load current
P SW = High side MOSFET switching losses
P TON = Turn on power losses
P TOFF = Turn off power losses
t FALL = MOSFET fall time
t RISE = MOSFET rise time
VCC = Input voltage
When calculating the rise time and fall time of the high
side MOSFET it is important to know the charge
characteristic shown in Figure 28.
R G = MOSFET gate resistance
R HSPD = Drive pull down resistance
t FALL = MOSFET fall time
V BST = Boost voltage
V TH = MOSFET gate threshold voltage
Next, the MOSFET output capacitance losses are caused
by both the high ? side and low ? side MOSFETs, but are
dissipated only in the high ? side MOSFET.
(eq. 28)
2
C OSS = MOSFET output capacitance at 0 V
F SW = Switching frequency
P DS = MOSFET drain to source charge losses
VCC = Input voltage
Finally, the loss due to the reverse recovery time of the
body diode in the low ? side MOSFET is shown as follows:
P RR + Q RR @ V IN @ F SW (eq. 29)
F SW = Switching frequency
P RR = High side MOSFET reverse recovery losses
Q RR = Reverse recovery charge
V CC = Input voltage
The low ? side MOSFET turns on into small negative
voltages so switching losses are negligible. The low ? side
MOSFET’s power dissipation only consists of conduction
loss due to R DS(on) and body diode loss during non ? overlap
periods.
P D_LS + P COND ) P BODY
(eq. 30)
Vth
P BODY
P COND
P D_LS
= Low side MOSFET body diode losses
= Low side MOSFET conduction losses
= Low side MOSFET losses
Conduction loss in the low ? side MOSFET is described as
follows:
Figure 28. High Side MOSFET Gate ? to ? Source and
P COND + I RMS_LS
2
@ R DS(on)_LS
(eq. 31)
I G1
ra 2
I RMS_LS + I OUT @
Drain ? to ? Source Voltage vs. Total Charge
Q GD Q GD
t RISE + + (eq. 26)
V BST * V TH R HSPU ) R G
I G1 = Output current from the high ? side gate
drive
I RMS_LS = RMS current in the low side
R DS(ON)_LS = Low ? side MOSFET on resistance
P COND = High side MOSFET conduction losses
12
D = Duty ratio
1 * D @ 1 ) (eq. 32)
Q GD
R HSPU
R G
t RISE
V BST
V TH
= MOSFET gate to drain gate charge
= Drive pull up resistance
= MOSFET gate resistance
= MOSFET rise time
= Boost voltage
= MOSFET gate threshold voltage
I OUT = Load current
I RMS_LS = RMS current in the low side
ra = Ripple current ratio
The body diode losses can be approximated as:
P BODY + V FD @ I OUT @ F SW @ NOL LH ) NOL HL
(eq. 33)
t FALL +
I G2
Q GD
Q GD
I G2
Q GD
+ (eq. 27)
V BST * V TH R HSPD ) R G
= Output current from the low ? side gate
drive
= MOSFET gate to drain gate charge
F SW
I OUT
NOL HL
NOL LH
= Switching frequency
= Load current
= Dead time between the high ? side
MOSFET turning off and the low ? side
MOSFET turning on, typically 46 ns
= Dead time between the low ? side
http://onsemi.com
16
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP3101BUCK2GEVB | 功能描述:电源管理IC开发工具 NCP3101 DEMO BD 55X25MM RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| NCP3101CMNTXG | 功能描述:直流/直流开关调节器 INTEGRATED SWITCHER RoHS:否 制造商:International Rectifier 最大输入电压:21 V 开关频率:1.5 MHz 输出电压:0.5 V to 0.86 V 输出电流:4 A 输出端数量: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PQFN 4 x 5 |
| NCP3101MNTXG | 功能描述:直流/直流开关调节器 6A SYNC BUCK CNVERTR RoHS:否 制造商:International Rectifier 最大输入电压:21 V 开关频率:1.5 MHz 输出电压:0.5 V to 0.86 V 输出电流:4 A 输出端数量: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PQFN 4 x 5 |
| NCP3102BMNTXG | 功能描述:直流/直流开关调节器 10A SYNC BUCK CNVRTR RoHS:否 制造商:International Rectifier 最大输入电压:21 V 开关频率:1.5 MHz 输出电压:0.5 V to 0.86 V 输出电流:4 A 输出端数量: 最大工作温度: 安装风格:SMD/SMT 封装 / 箱体:PQFN 4 x 5 |
| NCP3102BUCK1GEVB | 功能描述:电源管理IC开发工具 NCP3102 DEMO BD 100X110M RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
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