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| 型号： | NCP3418APDR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER DUAL 12V 8-SOIC |
| 产品变化通告： | Product Obsolescence 19/Dec/2008 |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | PWM |
| 延迟时间： | 30ns |
| 电流 - 峰： | 1.5A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 30V |
| 电源电压： | 4.6 V ~ 13.2 V |
| 工作温度： | 0°C ~ 85°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm Width）裸露焊盘 |
| 供应商设备封装： | 8-SOIC-EP |
| 包装： | 带卷 (TR) |
NCP3418, NCP3418A
Dual Bootstrapped 12 V
MOSFET Driver with
Output Disable
The NCP3418 and NCP3418A are dual MOSFET gate drivers
optimized to drive the gates of both high--side and low--side power
MOSFETs in a synchronous buck converter. Each of the drivers is
capable of driving a 3000 pF load with a 25 ns propagation delay and a
20 ns transition time.
With a wide operating voltage range, high or low side MOSFET
gate drive voltage can be optimized for the best efficiency. Internal,
http://onsemi.com
MARKING
DIAGRAMS
adaptive nonoverlap circuitry further reduces switching losses by
preventing simultaneous conduction of both MOSFETs.
The floating top driver design can accommodate VBST voltages as
high as 30 V, with transient voltages as high as 35 V. Both gate outputs
can be driven low by applying a low logic level to the Output Disable
8
1
SO--8
D SUFFIX
CASE 751
8
1
341x
AYWW
G
(OD) pin. An Undervoltage Lockout function ensures that both driver
outputs are low when the supply voltage is low, and a Thermal
Shutdown function provides the IC with overtemperature protection.
The NCP3418A is identical to the NCP3418 except that there is no
internal charge pump diode.
The NCP3418 is pin--to--pin compatible with Analog Devices
ADP3418 with the following advantages:
8
1
SO--8 EP
PD SUFFIX
CASE 751AC
8
1
341x
ALYW
Features
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Faster Rise and Fall Times
Internal Charge Pump Diode Reduces Cost and Parts Count
Thermal Shutdown for System Protection
Integrated OVP
Internal Pulldown Resistor Suppresses Transient Turn On of Either
MOSFET
Anti Cross--Conduction Protection Circuitry
Floating Top Driver Accommodates Boost Voltages of up to 30 V
One Input Signal Controls Both the Upper and Lower Gate Outputs
341x = Device Code
x = 8 or 8A
A = Assembly Location
L = Wafer Lot
Y = Year
WW, W = Work Week
G = Pb--Free Package
PIN CONNECTIONS
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Output Disable Control Turns Off Both MOSFETs
Complies with VRM 10.x Specifications
Undervoltage Lockout
Thermally Enhanced Package Available
Pb--Free Packages are Available
BST
IN
OD
V CC
1
8
DRVH
SW
PGND
DRVL
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
April, 2007 -- Rev. 13
1
Publication Order Number:
NCP3418/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP3418B | 制造商:ON Semiconductor 功能描述: |
| NCP3418BDR2G | 功能描述:功率驱动器IC 12V MosFET Driver w/Output Disable RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP3418BMNR2G | 功能描述:功率驱动器IC 12V MOSFET DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP3418D | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NCP3418DR2 | 功能描述:IC MOSFET DRIVER DUAL 12V 8-SOIC RoHS:否 类别:集成电路 (IC) >> PMIC - MOSFET，电桥驱动器 - 外部开关 系列:- 标准包装:95 系列:- 配置:半桥 输入类型:PWM 延迟时间:25ns 电流 - 峰:1.6A 配置数:1 输出数:2 高端电压 - 最大（自引导启动）:118V 电源电压:9 V ~ 14 V 工作温度:-40°C ~ 125°C 安装类型:表面贴装 封装/外壳:8-SOIC（0.154"，3.90mm 宽） 供应商设备封装:8-SOIC 包装:管件 产品目录页面:1282 (CN2011-ZH PDF) 其它名称:*LM5104M*LM5104M/NOPBLM5104M |
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