参数资料
型号: NCP346SN1EVB
厂商: ON Semiconductor
文件页数: 14/15页
文件大小: 0K
描述: EVAL BOARD FOR NCP346SN1
产品变化通告: Product Obsolescence 21/Jan/2010
设计资源: NCP346SN1 Demo Brd BOM
NCP346SN1EVB Gerber Files
NCP346SN1 Demo Brd Schematic
标准包装: 1
主要目的: 过压防护
嵌入式:
已用 IC / 零件: NCP346
已供物品:
其它名称: NCP346SN1EVBOS
NCP346
THIN SOT?23?5 POWER DISSIPATION
P D + 150 ° C – 25 ° C + 417 milliwatts
The power dissipation of the Thin SOT?23?5 is a function
of the pad size. This can vary from the minimum pad size for
soldering to a pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by T J(max) , the maximum rated junction
temperature of the die, R q JA , the thermal resistance from the
device junction to ambient, and the operating temperature,
T A . Using the values provided on the data sheet for the
Thin SOT?23?5 package, P D can be calculated as follows:
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values into
the equation for an ambient temperature T A of 25 ° C, one can
calculate the power dissipation of the device which in this
case is 400 milliwatts.
300 ° C W
The 300 ° C/W for the Thin SOT?23?5 package assumes
the use of the recommended footprint on a glass epoxy
P D +
T J(max) –T A
R q JA
printed circuit board to achieve a power dissipation of
417mw.
http://onsemi.com
14
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