参数资料
| 型号： | NCP360MUTBG |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/13页 |
| 文件大小： | 0K |
| 描述： | IC CTLR USB POS OVP FET 6-UDFN |
| 标准包装： | 1 |
| 电压 - 工作： | 1.2 ~ 20V |
| 电压 - 箝位： | 7.4V |
| 技术： | 混合技术 |
| 电路数： | 1 |
| 应用： | USB |
| 封装/外壳： | 6-UDFN 裸露焊盘 |
| 供应商设备封装： | 6-uDFN（2x2） |
| 包装： | 剪切带 (CT) |
| 其它名称： | NCP360MUTBGOSCT |
NCP360, NCV360
ELECTRICAL CHARACTERISTICS
(Min/Max limits values ( ? 40 ° C < T A < +85 ° C) and V in = +5.0 V. Typical values are T A = +25 ° C, unless otherwise noted.)
Characteristic
Input Voltage Range
Undervoltage Lockout Threshold
Undervoltage Lockout
Hysteresis
Symbol
V in
UVLO
UVLO hyst
Conditions
V in falls below UVLO threshold
MU/SN, SNAE
SNAF, SNAI
Min
1.2
2.85
50
30
Typ
3.0
70
50
Max
20
3.15
90
70
Unit
V
V
mV
Overvoltage Lockout Threshold
OVLO
V in rises above OVLO threshold
MU/SN
SNAE
5.43
6.0
5.675
6.25
5.9
6.5
V
SNAF
SNAI
6.75
7.0
7.07
7.2
7.4
7.4
Overvoltage Lockout Hysteresis
V in versus V out Dopout
Supply Quiescent Current
OVLO hyst
V drop
Idd
V in = 5 V, I charge = 500 mA
No Load, V in = 5.25 V
50
100
105
24
125
200
35
mV
mV
m A
OVLO Supply Current
Output Off State Current
Idd ovlo
I std
V in = 7 V
V in = 8 V
V in = 5.25 V, EN = 1.2 V
MU/SN, SNAE
SNAF, SNAI
50
50
26
85
85
37
m A
m A
FLAG Output Low Voltage
FLAG Leakage Current
EN Voltage High
EN Voltage Low
EN Leakage Current
Vol flag
FLAG leak
V ih
V il
EN leak
V in > OVLO, Sink 1 mA on FLAG pin
FLAG level = 5 V
V in from 3.3 V to 5.25 V
V in from 3.3 V to 5.25 V
EN = 5.5 V or GND
1.2
5.0
170
400
0.4
mV
nA
V
V
nA
TIMINGS
Start Up Delay
FLAG going up Delay
Output Turn Off Time
Alert Delay
Disable Time
Thermal Shutdown Temperature
Thermal Shutdown Hysteresis
t on
t start
t off
t stop
t dis
T sd
T sdhyst
From V in : (0 to (OVLO ? 300 mV) < V in < OVLO)
to V out = 0.8xV in , Rise time<4 m s See Figures 3&9
From V in > UVLO to FLAG = 1.2 V, See Fig 3 & 10
From V in > OVLO to V out ≤ 0.3 V, See Fig 4 & 11
V in increasing from normal operation to >OVLO at
1V/ m s. No output capacitor.
From V in > OVLO to FLAG ≤ 0.4 V, See Fig 4 & 12
V in increasing from normal operation to >OVLO at
1V/ m s
From EN 0.4 to 1.2V to V out ≤ 0.3V, See Fig 5 & 13
V in = 4.75 V. No output capacitor.
4.0
3.0
0.8
1.0
2.0
150
30
15
1.5
2.0
ms
m s
m s
m s
m s
° C
° C
NOTE:
Thermal Shutdown parameter has been fully characterized and guaranteed by design.
http://onsemi.com
5
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| NCP360MUTXG | 功能描述:监控电路 USB POS OVP PMOSFET AND STATUS FLAG RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCP360SNAET1G | 功能描述:监控电路 USB OVP SUPERVISORY RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCP360SNAFT1G | 功能描述:监控电路 USB OVP SUPERVISORY RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCP360SNAIT1G | 功能描述:监控电路 OVP SUPERVISORY OVLO RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
| NCP360SNT1G | 功能描述:监控电路 USB OVP SUPERVISORY RoHS:否 制造商:STMicroelectronics 监测电压数: 监测电压: 欠电压阈值: 过电压阈值: 输出类型:Active Low, Open Drain 人工复位:Resettable 监视器:No Watchdog 电池备用开关:No Backup 上电复位延迟（典型值）:10 s 电源电压-最大:5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:UDFN-6 封装:Reel |
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