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参数资料
| 型号： | NCP4896EVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 11/16页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR NCP4896 |
| 设计资源： | NPC4896 Demo Brd BOM NCP4896 Demo Brd Schematic |
| 标准包装： | 1 |
| 放大器类型： | AB 类 |
| 输出类型： | 1-通道（单声道）带单声道耳机 |
| 在某负载时最大输出功率 x 通道数量： | 1.08W x 1 @ 8 欧姆; 176mW x 1 @ 16 欧姆 |
| 电源电压： | 2.2 V ~ 5.5 V |
| 板类型： | 完全填充 |
| 已用 IC / 零件： | NCP4896 |
| 已供物品： | 板 |
| 其它名称： | NCP4896EVBOS |
NCP4896
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS Limits apply for TA between 40°C to +85°C (Unless otherwise noted).
Characteristic
Symbol
Conditions
Min
(Note 7)
Typ
Max
(Note 7)
Unit
Supply Quiescent Current
Idd
VP = 3.0 V, No Load
VP = 5.0 V, No Load BTL
1.7
1.8
mA
VP = 3.0 V, 8.0
W, BTL
VP = 5.0 V, 8.0
W, BTL
1.8
2.0
4.0
VP = 5.0 V, No Load, SE
1.0
2.5
VP = 5.0 V, 32
W, SE
1.1
mA
Common Mode Voltage
Vcm
VP/2
V
Shutdown Current
ISD
For VP Between 2.2 V to 5.5 V
SD = Low
TA = +25°C
TA = 40°C to +85°C
20
600
2.0
nA
mA
Shutdown Voltage High
VSDIH
1.4
V
Shutdown Voltage Low
VSDIL
0.4
V
SE Select
VBTL/SE
1.4
V
DE Select
VSE/BTL
0.4
V
Turning On Time (Note 8)
TWU
Cby = 1.0 mF
140
ms
Turning Off Time (Note 8)
TSD
20
ms
Output Swing
Vloadpeak
VP = 3.0 V, 8.0
W, BTL
VP = 5.0 V, 8.0
W, BTL
2.3
2.57
4.3
V
VP = 5.0 V, 32
W, SE
4.9
V
Rms Output Power
PO
VP = 5.0 V, 32
W, SE
THD + N < 0.1%
VP = 5.0 V, 16
W, SE
THD + N < 0.1%
VP = 5.0 V, 8.0
W, BTL
THD + N < 0.1%
92
176
1080
mW
Output Offset Voltage
Vos
For VP between 2.2 V to 5.5 V
BTL and SE
30
1.0
30
mV
Power Supply Rejection Ratio
PSRR V+
RF = Ri
= 20 kW
VPripple_pp = 200 mV
Cby = 1.0 mF
Input Terminated with 10
W
f = 217 Hz to 1.0 khz
VP = 5.0 V, 8.0
W, BTL
VP = 3.0 V, 8.0
W, BTL
VP = 5.0 V, 32
W, SE
VP = 3.0 V, 32
W, SE
66
67
69
70
dB
Efficiency
h
VP = 3.0 V, 8.0
W, BTL
Porms = 380 mW
VP = 5.0 V, 8.0
W, BTL
Porms = 1.0 W
64
63
%
Thermal Shutdown Temperature
Tsd
160
°C
Total Harmonic Distortion
THD + N
RF = Ri
= 20 kW
VP = 3.6 V, f = 1.0 kHz
Pout = 400 mW, 8.0 W, BTL
Pout = 40 mW, 16 W, BTL
Pout = 40 mW, 32 W, SE
0.02
0.01
0.003
%
7. Min/Max limits are guaranteed by design, test or statistical analysis.
8. See section “Application Information” for a theoretical approach of this parameter.
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