参数资料
型号: NCP5111PG
厂商: ON Semiconductor
文件页数: 1/14页
文件大小: 0K
描述: IC DRIVER HI/LOW SIDE HV 8-PDIP
标准包装: 50
配置: 半桥
输入类型: 非反相
延迟时间: 750ns
电流 - 峰: 250mA
配置数: 1
输出数: 2
高端电压 - 最大(自引导启动): 600V
电源电压: 10 V ~ 20 V
工作温度: -40°C ~ 125°C
安装类型: 通孔
封装/外壳: 8-DIP(0.300",7.62mm)
供应商设备封装: 8-PDIP
包装: 管件
NCP5111
High Voltage, High and Low
Side Driver
The NCP5111 is a high voltage power gate driver providing two
outputs for direct drive of 2 N ? channel power MOSFETs or IGBTs
arranged in a half ? bridge configuration.
It uses the bootstrap technique to ensure a proper drive of the
high ? side power switch.
Features
? High Voltage Range: up to 600 V
? dV/dt Immunity ± 50 V/nsec
? Gate Drive Supply Range from 10 V to 20 V
? High and Low Drive Outputs
? Output Source / Sink Current Capability 250 mA / 500 mA
? 3.3 V and 5 V Input Logic Compatible
? Up to V CC Swing on Input Pins
? Extended Allowable Negative Bridge Pin Voltage Swing to ? 10 V
for Signal Propagation
? Matched Propagation Delays between Both Channels
? One Input with Internal Fixed Dead Time (650 ns)
? Under V CC LockOut (UVLO) for Both Channels
? Pin ? to ? Pin Compatible with Industry Standards
? These are Pb ? Free Devices
Typical Applications
? Half ? bridge Power Converters
http://onsemi.com
MARKING
DIAGRAMS
1 8
SOIC ? 8 P5111
D SUFFIX ALYW
CASE 751 G
1
NCP5111
AWLG
YYWW
PDIP ? 8
P SUFFIX
CASE 626
NCP5111 = Specific Device Code
A = Assembly Location
L or WL = Wafer Lot
Y or YY = Year
W or WW = Work Week
G or G = Pb ? Free Package
(Note: Microdot may be in either location)
PINOUT INFORMATION
VCC
IN
GND
DRV_LO
1
2
3
4
8
7
6
5
VBOOT
DRV_HI
BRIDGE
NC
ORDERING INFORMATION
Device
NCP5111PG
NCP5111DR2G
Package
PDIP ? 8
(Pb ? Free)
SOIC ? 8
Shipping ?
50 Units / Rail
2500 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
August, 2013 ? Rev. 4
1
Publication Order Number:
NCP5111/D
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