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参数资料
| 型号： | NCP5181BAL36WEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/12页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL NCP5181 36 W BALLAST |
| 设计资源： | NCP5181BAL36WEVB Schematic NCP5181BAL36WEVB Gerber Files NCP5181BAL36WEVB Bill of Materials |
| 标准包装： | 1 |
| 系列： | * |
NCP5181
TYPICAL CHARACTERISTICS
40
35
35
30
25
20
15
t r High Side
t r Low Side
30
25
20
15
t r Low Side
t r High Side
10
5.0
10
5.0
0
? 40
? 20
0
20
40
60
80
100
120
0
10
12
14
16
18
20
30
TEMPERATURE ( ° C)
Figure 13. Turn ? on Rise Time vs. Temperature
20
SUPPLY VOLTAGE; V CC = V boot (V)
Figure 14. Turn ? on Rise Time vs. V CC Voltage
(V CC = V boot )
25
20
15
10
5.0
t f Low Side
t f High Side
18
16
14
12
10
8.0
6.0
4.0
2.0
t f Low Side
t f High Side
0
? 40
? 20
0
20
40
60
80
100
120
0
10
12
14
16
18
20
TEMPERATURE ( ° C)
Figure 15. Turn ? off Fall Time vs. Temperature
40
35
30
25
20
15
10
5
SUPPLY VOLTAGE; V CC = V boot (V)
Figure 16. Turn ? off Fall Time vs. V CC Voltage
(V CC = V boot )
0
? 40
? 20
0
20
40
60
80
100
120
TEMPERATURE ( ° C)
Figure 17. Propagation Delay Matching
Between High Side and Low Side Driver
http://onsemi.com
7
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相关代理商/技术参数 |
参数描述 |
|---|---|
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| NCP5181DR2G-CUT TAPE | 制造商:ON 功能描述:NCP Series 2.2 A 20 V 2 Ohm SMT High Voltage High and Low Side Driver - SOIC-8 |
| NCP5181PG | 功能描述:功率驱动器IC HV MOSFET DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP5201 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Dual Output DDR Power Controller |
| NCP5201/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Dual Output DDR Power Controller |
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