参数资料
| 型号： | NCP5203MNR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 4/10页 |
| 文件大小： | 0K |
| 描述： | IC CTRLR PWR DDR DUAL 5X6 18-DFN |
| 产品变化通告： | Product Discontinuation 01/Oct/2008 |
| 标准包装： | 2,500 |
| 应用： | 控制器，DDR |
| 输入电压： | 4.5 V ~ 5.5 V |
| 输出数： | 2 |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 18-VFDFN 裸露焊盘 |
| 供应商设备封装： | 18-DFN（5x6） |
| 包装： | 带卷 (TR) |
| 其它名称： | NCP5203MNR2GOS |
NCP5203
PIN FUNCTION DESCRIPTION
Pin No.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Symbol
VDDQEN
VTTEN
PGOOD
REFSNS
FBVTT
AGND
SS
COMP
FBDDQ
OCDDQ
SWDDQ
5VDUAL
TGDDQ
BGDDQ
BST
PGND
VTT
VDDQ
Description
VDDQ regulator enable input. Active high.
VTT regulator enable input. Active high.
Power good signal open?drain output.
Reference voltage input of VTT regulator.
VTT regulator feedback pin for closed loop regulation.
Analog ground connection and remote ground sense.
Soft?start capacitor connection to ground.
VDDQ error amplifier compensation node.
VDDQ regulator feedback pin for closed loop regulation.
Overcurrent sense and program input for the high?side FET of VDDQ regulator.
VDDQ regulator inductor driven node and current limit sense input.
5VDUAL supply input.
Gate driver output for DDQ regulator high?side N?Channel power FET.
Gate driver output for DDQ regulator low?side N?Channel power FET.
Supply input of VDDQ regulator and 5 V boost capacitor connection.
Power ground.
VTT regulator output.
Power input for VTT regulator.
MAXIMUM RATINGS (Note 1)
Rating
Power Supply Voltage (Pin 12, 18)
Gate Drive Supply/Output Voltage (Pin 13, 14, 15)
Switch DDQ (Pin 11)
Input/Output Pins (Pin 1, 2, 7; 4, 5, 17; 3, 8, 9, 10)
Thermal Characteristics
QFN?18 Plastic Package
Thermal Resistance Junction?to?Ambient
Operating Junction Temperature Range
Operating Ambient Temperature Range
Storage Temperature Range
Moisture Sensitivity Level
Symbol
5VDUAL
VBST, Vg
SWDDQ
V IO
R q JA
T J
T A
T stg
MSL
Value
?0.3, 6.5
?0.3, 14
?1.0, 5VDUAL
?0.3, 6.5
35
0 to +150
0 to +70
?55 to +150
2.0
Unit
V
V
V
V
° C/W
° C
° C
° C
?
Electro Static Discharge (ESD)
Human Body Model
Machine Model
HBM
MM
2.0
200
kV
V
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values
(not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage
may occur and reliability may be affected.
1. All voltages are with respect to AGND (Pin 6) and PGND (Pin 16).
http://onsemi.com
4
相关PDF资料 |
PDF描述 |
|---|---|
| NCP5208DR2G | IC REG TERM DDR-I/II 1.7V 8SOIC |
| NCP5210MNR2G | IC CTLR PWM/DDR DUAL BUCK 20-DFN |
| NCP5211BDR2G | IC REG CTRLR BUCK PWM 14-SOIC |
| NCP5212AMNTXG | IC REG CTRLR BUCK PWM 16-QFN |
| NCP5214AMNR2G | IC CTLR NOTEBOOK DDR PWR 22-DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP5208 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:DDR−I/II Termination Regulator |
| NCP5208/D | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:DDR-I/II Termination Regulator |
| NCP5208_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:DDR−I/II Termination Regulator |
| NCP5208DR2 | 功能描述:线性稳压器 - 标准 DDR-I/II Termination RoHS:否 制造商:STMicroelectronics 输出类型: 极性: 输出电压:1.8 V 输出电流:150 mA 负载调节: 最大输入电压:5.5 V 线路调整率: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOT-323-5L |
| NCP5208DR2G | 功能描述:线性稳压器 - 标准 DDR-I/II Termination RoHS:否 制造商:STMicroelectronics 输出类型: 极性: 输出电压:1.8 V 输出电流:150 mA 负载调节: 最大输入电压:5.5 V 线路调整率: 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:SOT-323-5L |
发布紧急采购，3分钟左右您将得到回复。