参数资料
| 型号： | NCP5208DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/9页 |
| 文件大小： | 0K |
| 描述： | IC REG TERM DDR-I/II 1.7V 8SOIC |
| 产品变化通告： | Product Discontinuation 27/Jan/2012 |
| 标准包装： | 1 |
| 应用： | 控制器，DDR，DDR2 |
| 输入电压： | 1.7 V ~ 5.5 V |
| 输出数： | 2 |
| 输出电压： | 0.9 V，1.25V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 剪切带 (CT) |
| 其它名称： | NCP5208DR2GOSCT |
NCP5208
TYPICAL OPERATING CHARACTERISTICS
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PV IN = AV IN = V DDQ = 2.5 V
IVTT = 0 A
0
10
20
30
40
50
60
70
T A , AMBIENT TEMPERATURE ( ° C)
Figure 9. V DDQ Input Impedance vs. Ambient
Temperature
TYPICAL OPERATING WAVEFORMS
0.4 ms ON, 1.6 ms OFF
(PV IN = AV IN = V DDQ = 1.8 V)
Upper Trace: VTT Output Waveform, 50 mV/Division, AC Coupled
Lower Trace: Loading Current, IVTT, 500 mA/Division
Figure 10. VTT Current Source Transient
0.4 ms ON, 1.6 ms OFF
(PV IN = AV IN = V DDQ = 2.5 V)
Upper Trace: VTT Output Waveform, 50 mV/Division, AC Coupled
Lower Trace: Loading Current, IVTT, 1 A/Division
Figure 12. VTT Current Source Transient
0.4 ms ON, 1.6 ms OFF
(PV IN = AV IN = V DDQ = 1.8 V)
Upper Trace: VTT Output Waveform, 50 mV/Division, AC Coupled
Lower Trace: Loading Current, IVTT, 500 mA/Division
Figure 11. VTT Current Sink Transient
0.4 ms ON, 1.6 ms OFF
(PV IN = AV IN = V DDQ = 2.5 V)
Upper Trace: VTT Output Waveform, 50 mV/Division, AC Coupled
Lower Trace: Loading Current, IVTT, 1 A/Division
Figure 13. VTT Current Sink Transient
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