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参数资料
| 型号： | NCP5422EVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR NCP5422 |
| 设计资源： | NCP5422EVB BOM NCP5422EVB Gerber Files NCP5422EVB Schematic |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 2 个，非隔离式，（2 个电路） |
| 输出电压： | 1.5V，1.8V |
| 电流 - 输出： | 10A，10A |
| 输入电压： | 12V |
| 稳压器拓扑结构： | 降压 |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCP5422 |
| 其它名称： | NCP5422EVBOS |
NCP5422A
ABSOLUTE MAXIMUM RATINGS
Operating Junction Temperature, T J
Storage Temperature Range, T S
ESD Susceptibility (Human Body Model)
Package Thermal Resistance, SO-16:
Junction-to-Case, R q JC
Junction-to-Ambient, R q JA
Rating
Value
150
-65 to +150
2.0
28
115
Unit
° C
° C
kV
° C/W
° C/W
Lead Temperature Soldering:
Reflow: (Note 1)
230 peak
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 60 second maximum above 183 ° C.
ABSOLUTE MAXIMUM RATINGS
Pin Symbol
V CC
Pin Name
IC Power Input
V MAX
16 V
V MIN
-0.3 V
I SOURCE
N/A
I SINK
1.5 A peak
200 mA DC
COMP1, COMP2
Compensation Capacitor for
4.0 V
-0.3 V
1.0 mA
1.0 mA
Channel 1 or 2
V FB1 , V FB2
Voltage Feedback Input for
5.0 V
-0.3 V
1.0 mA
1.0 mA
Channel 1 or 2
BST
Power Input for GATE(H)1, 2
20 V
-0.3 V
N/A
1.5 A peak
200 mA DC
R OSC
GATE(H)1 , GATE(H)2
GATE(L)1 , GATE(L)2
GND
Oscillator Resistor
High-Side FET Driver
for Channel 1 or 2
Low-Side FET Driver for
Channel 1 or 2
Ground
4.0 V
20 V
16 V
0V
-0.3 V
-2.0 V for 100 ns
-0.3 V DC
-2.0 V for 100 ns
-0.3 V DC
0V
1.0 mA
1.5 A peak
200 mA DC
1.5 A peak
200 mA DC
1.5 A peak
1.0 mA
1.5 A peak
200 mA DC
1.5 A peak
200 mA DC
N/A
200 mA DC
IS+1, IS+2
Positive Current Sense for
6.0 V
-0.3 V
1.0 mA
1.0 mA
Channel 1 or 2
IS-1, IS-2
Negative Current Sense for
6.0 V
-0.3 V
1.0 mA
1.0 mA
Channel 1 or 2
http://onsemi.com
3
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