参数资料
型号: NCP5890MUTXG
厂商: ON Semiconductor
文件页数: 5/19页
文件大小: 0K
描述: IC LED DRVR WHITE BCKLGT 16-UQFN
产品变化通告: Product Obsolescence 07/Jul/2010
标准包装: 3,000
拓扑: PWM,升压(升压)
输出数: 3
内部驱动器:
类型 - 主要: 背光,闪灯/白光,照明管理装置(LMU)
类型 - 次要: RGB,白色 LED
频率: 1.13MHz ~ 1.47MHz
电源电压: 2.7 V ~ 5.5 V
输出电压: 30 V ~ 34 V
安装类型: 表面贴装
封装/外壳: 16-UFQFN 裸露焊盘
供应商设备封装: 16-UQFN-EP(3x3)
包装: 带卷 (TR)
工作温度: -40°C ~ 85°C
NCP5890
MAXIMUM RATINGS (Note 2)
Symbol
V BAT
V LX
SCL, SDA
ESD
P D
R q jc
R q ja
T A
T J
T Jmax
T stg
Rating
Power Supply
Output Switching Voltage
Digital Input Voltage
Digital Input Current
Human Body Model: R = 1500 W , C = 100 pF (Note 3)
Machine Model
UQFN16 package ? Power Dissipation @ T A = +85 ° C (Note 4)
LLGA16 package ? Thermal Resistance Junction to Case
LLGA16 package ? Thermal Resistance Junction to Air
Operating Ambient Temperature Range
Operating Junction Temperature Range
Maximum Junction Temperature
Storage Temperature Range
Latch ? up current maximum rating per JEDEC standard: JESD78.
Value
? 0.3 < V < 7.0
34
? 0.3 < V < V BAT
1
2
200
300
50
130
? 40 to +85
? 40 to +125
+150
? 65 to + 150
± 100
Unit
V
V
V
mA
kV
V
mW
° C/W
° C/W
° C
° C
° C
° C
mA
2. Maximum electrical ratings define the values beyond which permanent damage(s) may occur internally to the chip whatever the operating
temperature may be.
3. This device series contains ESD protection and exceeds the following tests:
Human Body Model (HBM) ± 2.0 kV per JEDEC standard: JESD22 ? A114
Machine Model (MM) ± 200 V per JEDEC standard: JESD22 ? A115
4. The maximum package power dissipation limit must not be exceeded.
5. Moisture Sensitivity Level (MSL): 1 per IPC/JEDEC standard: J ? STD ? 020A.
POWER SUPPLY SECTION: (Typical values are referenced to Ta = +25 ° C, Min & Max values are referenced ? 40 ° C to +85 ° C ambient
temperature, unless otherwise noted),operating conditions 2.85 V < Vbat < 5.5 V, unless otherwise noted.
Pin
15
15
15
13
Symbol
V bat
V UVLO
V UVLOHY
I out
Rating
Power Supply
Power Supply Input Voltage (See Figure 22)
Under Voltage Hysterisis, negative going slope
Continuous load DC current, Vout pin
Min
2.7
2.0
150
25
Typ
2.2
Max
5.5
2.4
270
Unit
V
V
mV
mA
@ 3.0 V < Vbat < 5.5 V, Cout = 1.0 m F
13
Isw
Output Leakage Current (Lx pin) @ Iout = 0, Vout = 35 V
200
nA
15
Vout
Vout HY
Tstart
I stdb
Output Voltage Compliance (OVP)
OVP Output Voltage Hysterisis
DC/DC Start time (Cout = 1.0 m F) 3.0 V < Vbat = nominal < 5.5 V from last
ACK bit to full load operation
Stand By Current, Vbat = 3.6 V, Iout = 0 mA
30
1.0
32
600
34
1.8
1.0
V
V
m s
m A
@SCL = SDA = H (no port activity)
15
I op
Operating Current, @ Iout = 0 mA, Vbat = 3.6 V
2.0
mA
13
13
I PK
I TOL
Maximum Inductor Peak Current @ R = 13 k W
Output Current Tolerance @Vbat = 3.6V, I LED = 10 mA
? 10%
855
± 1
+10%
mA
%
? 25 ° C < T A < 85 ° C
13
Fpwr
Boost Operating Frequency (0 ° C < T A < 85 ° C)
1.13
1.3
1.47
MHz
T SD
T SDH
E PWR
Thermal Shutdown Protection
Thermal Shutdown Protection Hysteresis
Efficiency @ Vbat = 3.6 V, ESR ≤ 150 m W
Coilcraft = LPO3310 ? 472ML, Cout = 1.0 m F
160
30
75
80
° C
° C
%
%
I ? LED = 10 mA, Vf = 2.85 V
I ? LED = 25 mA, Vf = 3.4 V (Note 6)
R DS(on)
Power Switch NMOS R DS(on)
500
m W
6. Note 1: using low DCR inductor with low eddy current losses is mandatory to get the high efficiency operation
http://onsemi.com
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