参数资料
型号: NCP5890MUTXG
厂商: ON Semiconductor
文件页数: 7/19页
文件大小: 0K
描述: IC LED DRVR WHITE BCKLGT 16-UQFN
产品变化通告: Product Obsolescence 07/Jul/2010
标准包装: 3,000
拓扑: PWM,升压(升压)
输出数: 3
内部驱动器:
类型 - 主要: 背光,闪灯/白光,照明管理装置(LMU)
类型 - 次要: RGB,白色 LED
频率: 1.13MHz ~ 1.47MHz
电源电压: 2.7 V ~ 5.5 V
输出电压: 30 V ~ 34 V
安装类型: 表面贴装
封装/外壳: 16-UFQFN 裸露焊盘
供应商设备封装: 16-UQFN-EP(3x3)
包装: 带卷 (TR)
工作温度: -40°C ~ 85°C
NCP5890
DC/DC OPERATION
Vbat
?
3
The boost converter is based on a PWM structure to
generate the output voltage necessary to drive the series
arranged LED. The system includes an open load detection
to avoid over voltage situation when the LED are
disconnected from the Vout pin. A built ? in circuit prevent
high inrush current when the system is powered.
The ILED is regulated by means of a built ? in current
mirror controlled by the digital content of the ILEDREG
register. With a typical 1.3 Mhz operation frequency, the
converter can run at full power with a tiny 4.7 m H inductor.
However, care must be observed, at DCR level, to optimize
the total DC/DC conversion efficiency. In particular, the
Vbat
2
L1
4.7uH
Current Sense 1 DNSR0320MW2T1
+ H1
M8
2
1
D5
470 nF
H C1
D6
D2
D3
ferrite material shall have limited eddy current losses at
high frequency. Depending upon the type of material, the
eddy losses in the inductor can range from a low 40 mW to
FEEDBACK
D4
a high 250 mW under the same bias and load conditions.
The ILED current is regulated by the means of internal
current mirror connected to the FB pin. The voltage at this
pin can vary between a low 100 mV to a 1.5 V maximum,
depending upon the ILED current amplitude. Typically, the
FB voltage will be 425 mV under normal operation.
Vbat
I1
Iref
3
M9
1
2
2
3
1
M10
Table 1. Recommended Inductor Manufacturers
Part Number Manufacturers
Figure 4. Simplified Boost Structure
LPO3310 ? 472ML
VLS3010T ? 4R7MR80
COILCRAFT
TDK
Figure 5. Typical Switching Operation
http://onsemi.com
7
V bat = 3.6 V
ILED = 25 mA
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