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| 型号： | NCP5901DR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/9页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR SYNC VR12 8-SOIC |
| 标准包装： | 2,500 |
| 配置： | 高端和低端，同步 |
| 输入类型： | 非反相 |
| 延迟时间： | 25ns |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 35V |
| 电源电压： | 4.5 V ~ 13.2 V |
| 工作温度： | -10°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
| 其它名称： | NCP5901DR2G-ND NCP5901DR2GOSTR |
NCP5901
VR12 Compatible
Synchronous Buck MOSFET
Drivers
The NCP5901 is a high performance dual MOSFET gate driver
optimized to drive the gates of both high ? side and low ? side power
MOSFETs in a synchronous buck converter. It can drive up to 3 nF
load with a 25 ns propagation delay and 20 ns transition time.
Adaptive anti ? cross ? conduction and power saving operation
circuit can provide a low switching loss and high efficiency solution
8
http://onsemi.com
for notebook and desktop systems. Bidirectional EN pin can provide
a fault signal to controller when the gate driver fault detect under
OVP, UVLO occur. Also, an under ? voltage lockout function
guarantees the outputs are low when supply voltage is low.
Features
1
SOIC ? 8 NB
D SUFFIX
CASE 751
1
DFN8
MN SUFFIX
CASE 506AA
? Faster Rise and Fall Times
? Adaptive Anti ? Cross ? Conduction Circuit
? Pre OV function
? ZCD Detect
? Floating Top Driver Accommodates Boost Voltages of up to 35 V
? Output Disable Control Turns Off Both MOSFETs
? Under ? voltage Lockout
? Power Saving Operation Under Light Load Conditions
? Direct Interface to NCP6151 and Other Compatible PWM
Controllers
? Thermally Enhanced Package
? These are Pb ? Free Devices
Typical Applications
MARKING DIAGRAMS
8
N5901
ALYW
G
1
N5901 = Specific Device Code
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb ? Free Package
1
AJM G
G
? Power Solutions for Desktop Systems
AJ
M
G
= Specific Device Code
= Date Code
= Pb ? Free Device
ORDERING INFORMATION
Device
NCP5901MNTBG
NCP5901DR2G
Package
DFN8
(Pb ? Free)
SOIC ? 8
Shipping ?
3000 / Tape & Reel
2500 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2013
June, 2013 ? Rev. 2
1
Publication Order Number:
NCP5901/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCP5901EMNTBG | 制造商:ON Semiconductor 功能描述:VR12 MOSFET DRIVER - Tape and Reel |
| NCP5901MNTBG | 功能描述:功率驱动器IC VR12 MOSFET DRIVER RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| NCP590MN5ATAG | 功能描述:低压差稳压器 - LDO DUAL LDO 1.2V/1.5V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCP590MN5ATAGEVB | 功能描述:电源管理IC开发工具 DEMO 1.2V X 1.5V RoHS:否 制造商:Maxim Integrated 产品:Evaluation Kits 类型:Battery Management 工具用于评估:MAX17710GB 输入电压: 输出电压:1.8 V |
| NCP590MN5DTAG | 功能描述:低压差稳压器 - LDO DUAL LDO 1.2V/1.8V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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