参数资料
型号: NCP629FC33T2G
厂商: ON Semiconductor
文件页数: 3/11页
文件大小: 0K
描述: IC REG LDO 3.3V .15A 5-FLIPCHIP
产品变化通告: Product Obsolescence 30/Sept/2009
标准包装: 3,000
稳压器拓扑结构: 正,固定式
输出电压: 3.3V
输入电压: 最高 6V
电压 - 压降(标准): 0.075V @ 150mA
稳压器数量: 1
电流 - 输出: 150mA(最小值)
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 5-UFBGA,FCBGA
供应商设备封装: 5-覆晶
包装: 带卷 (TR)
NCP629
ELECTRICAL CHARACTERISTICS
(V in = V out + 0.5 V, C in = C out =1.0 m F, for typical values T A = 25 ° C, for min/max values T A = -40 ° C to 125 ° C; unless otherwise noted.)
(Note 7)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
Regulator Output
Output Voltage
1.5 V
1.8 V
I out = 1.0 mA to 150 mA
V in = (V out + 0.5 V) to 6.0 V
Vout
1.470
1.764
1.530
1.836
V
2.8 V
3.0 V
3.3 V
3.5 V
5.0 V
2.744
2.940
3.234
3.430
4.900
(-2%)
2.856
3.060
3.366
3.570
5.100
(+2%)
Power Supply Ripple Rejection (Note 8)
(V in = V out + 1.0 V + 0.5 V p-p )
Line Regulation
Load Regulation
1.5 V
I out = 1.0 mA to 150 mA
f = 120 Hz
f = 1.0 kHz
f = 10 kHz
V in = (V out + 0.5 V) to 6.0 V,
I out = 1.0 mA
I out = 1.0 mA to 150 mA
PSRR
Regline
Regload
-
-
-
-
-
62
55
38
1.0
2.0
-
-
-
10
20
dB
mV
mV
1.8 V
2.8 V to 5.0 V
-
-
2.0
2.0
25
30
Output Noise Voltage (Note 8)
Output Short Circuit Current
Dropout Voltage
1.5 V
1.8 V
V out = 1.5 V,
f = 10 Hz to 100 kHz
Vout = 0 V
Measured at: V out – 2.0%
Iout = 150 mA
Vn
Isc
V DO
-
300
-
-
50
550
150
125
-
800
225
175
m V rms
mA
mV
2.8 V to 5.0 V
-
75
125
General
Disable Current
Ground Current
1.5 V
ENABLE = 0 V, Vin = 6 V
-40 ° C ≤ T A ≤ 85 ° C
ENABLE = 0.9 V,
I out = 1.0 mA to 150 mA
IDIS
IGND
-
-
0.01
135
1.0
170
m A
m A
1.8 V to 3.0 V
3.3 V to 5.0 V
-
-
140
145
175
180
Thermal Shutdown Temperature (Note 8)
Thermal Shutdown Hysteresis (Note 8)
TSD
TSH
-
-
175
10
-
-
° C
° C
Chip Enable
ENABLE Input Threshold Voltage
Vth(EN)
V
Voltage Increasing, Logic High
Voltage Decreasing, Logic Low
0.9
-
-
-
-
0.4
Enable Input Bias Current (Note 8)
IEN
-
3.0
100
nA
Timing
Output Turn On Time
ENABLE = 0 V to V in
t on
m s
1.5 V to 3.5 V
5.0 V
-
-
15
30
25
50
7. Performance guaranteed over the indicated operating temperature range by design and/or characterization, production tested at
T J = T A = 25 ° C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
8. Values based on design and/or characterization.
http://onsemi.com
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