参数资料
| 型号： | NCV1124DG |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/8页 |
| 文件大小： | 0K |
| 描述： | IC SENSOR DUAL VAR-RELUCT 8-SOIC |
| 标准包装： | 98 |
| 类型： | 可变磁阻 |
| 输入类型： | 逻辑 |
| 输出类型： | 逻辑 |
| 接口： | 双，串联或并联 |
| 电流 - 电源： | 5mA |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 管件 |
| 产品目录页面： | 1131 (CN2011-ZH PDF) |
| 其它名称： | NCV1124DG-ND NCV1124DGOS |
Semiconductor Components Industries, LLC, 2006
April, 2006 Rev. 0
1
Publication Order Number:
NCV1124/D
NCV1124
Dual VariableReluctance
Sensor Interface IC
The NCV1124 is a monolithic integrated circuit designed primarily
to condition signals from sensors used to monitor rotating parts.
The NCV1124 is a dual channel device. Each of the two identical
channels interfaces with a variablereluctance sensor, and
cont i nuous l y compares the sens o r out put si gnal to a
userprogrammable internal reference. An alternating input signal of
appropriate amplitude at IN1 or IN2 will result in a rectangular
waveform at the corresponding OUT terminal, suitable for interface to
either standard microprocessors or standard logic families.
A diagnostic input, common to both channels, provides a means to
test for degradation or loss of the physical connector to both sensors.
Typical Applications
AntiSkid Braking and Traction Control
Vehicle Stability Control
Drive Belt Slippage Detection
Crankshaft/Camshaft Position Sensing
Features
Two Independent Channels
Internal Hysteresis
BuiltIn Diagnostic Mode
Designed to Work from a 5.0 V "10% Supply
Site and Control for Automotive Applications
PbFree Packages are Available
Figure 1. Block Diagram
OUT1
To
mP
VCC
VCC VCC VCC
VCC
INP1
INAdj
DIAG
IN1
C1
R1
RRS
VRS
Variable
Reluctance
Sensor
+
COMP1
Active
Clamp
VCC
INP2
IN2
C2
R2
RRS
VRS
Variable
Reluctance
Sensor
+
COMP2
Active
Clamp
OUT2
To
mP
RAdj
GND
SO8
CASE 751
V1124
= Device Code
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= PbFree Package
MARKING DIAGRAM
1
8
V1124
ALYW4
G
DIAG
GND
18
OUT2
IN2
OUT1
IN1
VCC
INAdj
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
PIN CONNECTIONS
http://onsemi.com
1
8
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV1124DR2G | 功能描述:接口 - 专用 DUAL VARIABLE RELUCTANCE RoHS:否 制造商:Texas Instruments 产品类型:1080p60 Image Sensor Receiver 工作电源电压:1.8 V 电源电流:89 mA 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:BGA-59 |
| NCV1406SNT1G | 功能描述:直流/直流开关转换器 STEP-UP DC-DC CONVERTER RoHS:否 制造商:STMicroelectronics 最大输入电压:4.5 V 开关频率:1.5 MHz 输出电压:4.6 V 输出电流:250 mA 输出端数量:2 最大工作温度:+ 85 C 安装风格:SMD/SMT |
| NCV1413B | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Voltage, High Current Darlington Transistor Arrays |
| NCV1413BDR2 | 功能描述:达林顿晶体管 High Voltage High RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
| NCV1413BDR2G | 功能描述:达林顿晶体管 High Voltage High Current Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶体管极性:NPN 集电极—发射极最大电压 VCEO:50 V 发射极 - 基极电压 VEBO: 集电极—基极电压 VCBO: 最大直流电集电极电流:0.5 A 最大集电极截止电流: 功率耗散: 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-18 封装:Reel |
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