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参数资料
| 型号： | NCV3020BDR2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 14/23页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR BUCK PWM VM 8-SOIC |
| 标准包装： | 2,500 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 670kHz |
| 占空比： | 80% |
| 电源电压： | 4.7 V ~ 28 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 无 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 包装： | 带卷 (TR) |
NCP3020A, NCP3020B, NCV3020A, NCV3020B
Reduced sampling time occurs at high duty cycles where
the low side MOSFET is off for the majority of the switching
period. Reduced sampling time causes errors in the
regulated voltage on the boost pin. High duty cycle / input
voltage induced sampling errors can result in increased
boost ripple voltage or higher than desired DC boost voltage.
Figure 29 outlines all operating regions.
The recommended operating conditions are shown in
Region 1 (Green) where a 0.1 m F, 25 V ceramic capacitor
can be placed on the boost pin without causing damage to the
device or MOSFETS. Larger boost ripple voltage occurring
over several switching cycles is shown in Region 2 (Yellow).
Boost Voltage Levels
The boost ripple frequency is dependent on the output
capacitance selected. The ripple voltage will not damage the
device or $ 12 V gate rated MOSFETs.
Conditions where maximum boost ripple voltage could
damage the device or $ 12 V gate rated MOSFETs can be
seen in Region 3 (Orange). Placing a boost capacitor that is
no greater than 10X the input capacitance of the high side
MOSFET on the boost pin limits the maximum boost
voltage < 12 V. The typical drive waveforms for Regions 1,
2 and 3 (green, yellow, and orange) regions of Figure 29 are
shown in Figure 30.
Normal Operation
Increased Boost Ripple
(Still in Specification)
Increased Boost Ripple
Capacitor Optimization
Required
28
26
24
22
20
22V
Region 3
18
16
14
Region 1
Region 2
Max
Maxi
mum
Duty
Cycle
12
10
8
6
4
11.5V
71%
2
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
Duty Cycle
Figure 29. Safe Operating Area for Boost Voltage with a 0.1 m F Capacitor
http://onsemi.com
14
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV302LSN20T1G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Voltage Detector Series with Programmable Delay |
| NCV302LSN30T1 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Voltage Detector Series with Programmable Delay |
| NCV302LSN30T1G | 功能描述:电压监测器/监控器 ANA UNDERVOLT DETECT 3.0V RoHS:否 制造商:Texas Instruments 监测电压数:2 监测电压:Adjustable 输出类型:Open Drain 欠电压阈值: 过电压阈值: 准确性:1 % 工作电源电压:1.5 V to 6.5 V 工作电源电流:1.8 uA 最大工作温度:+ 125 C 封装 / 箱体:SON-6 安装风格:SMD/SMT |
| NCV3030ADR2G | 功能描述:电压模式 PWM 控制器 PWM CONTROLLER RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
| NCV3030BDR2G | 功能描述:电压模式 PWM 控制器 PWM CONTROLLER RoHS:否 制造商:Texas Instruments 输出端数量:1 拓扑结构:Buck 输出电压:34 V 输出电流: 开关频率: 工作电源电压:4.5 V to 5.5 V 电源电流:600 uA 最大工作温度:+ 125 C 最小工作温度:- 40 C 封装 / 箱体:WSON-8 封装:Reel |
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