参数资料
| 型号： | NCV7382DR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 11/16页 |
| 文件大小： | 0K |
| 描述： | IC TRANSCEIVER LIN ENH 8-SOIC |
| 产品变化通告： | Product Discontinuation 21/Jun/2007 |
| 标准包装： | 2,500 |
| 类型： | 收发器 |
| 驱动器/接收器数： | 1/1 |
| 规程： | LIN |
| 电源电压： | 7 V ~ 18 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NCV7382
http://onsemi.com
4
ELECTRICAL CHARACTERISTICS (VS = 7.0 to 18 V, VCC = 4.5 to 5.5 V and TA = -40 to 125°C unless otherwise noted.)
Characteristic
Symbol
Condition
Min
Typ
Max
Unit
GENERAL
VCC Undervoltage Lockout
VCC_UV
EN = H, TxD = L
2.75
-
4.3
V
Supply Current, Dominant
ISd
VS = 18 V, VCC = 5.5 V, TxD = L
-
0.9
2.0
mA
Supply Current, Dominant
ICCd
VS = 18 V, VCC = 5.5 V, TxD = L
-
0.6
2.0
mA
Supply Current, Recessive
ISr
VS = 18 V, VCC = 5.5 V TxD = H
-
25
50
mA
Supply Current, Recessive
ICCr
VS = 18 V, VCC = 5.5 V TxD = H
-
50
75
mA
Supply Current, Sleep Mode
ISsl
VS = 12 V, VCC and TxD = 0 V,
TA = 25°
-
6.5
-
mA
Supply Current, Sleep Mode
ISsl
VS = 12 V, VCC and TxD = 0 V
-
6.5
14
mA
Thermal Shutdown
-
155
-
180
°C
Thermal Recovery
-
126
-
150
°C
BUS TRANSMIT
Short Circuit Bus Current
IBUS_LIM
VBUS = VS, Driver On
-
120
200
mA
Pullup Current Bus
IBUS_PU
VBUS = 0, VS = 12 V, Driver Off
-600
-
-200
mA
Pullup Current Bus
IBUS_PU_SLEEP
VBUS = 0, VS = 12 V, Sleep Mode
-100
-75
-
mA
Bus Reverse Current,
Recessive
IBUS_PAS_rec
VBUS > VS, 8.0 V < VBUS < 18 V
7.0 V < VS < 18 V, Driver Off
-
20
mA
Bus Reverse Current Loss of
Battery
IBUS
VS = 0 V, 0 V < VBUS < 18 V
-
100
mA
Bus Current During Loss of
Ground
IBUS_NO_GND
VS = 12 V, 0 < VBUS < 18 V
-1.0
-
1.0
mA
Transmitter Dominant Voltage
VBUSdom_DRV_2
(Note 5)
VS = 7.0 V, Load = 500 W
-
1.2
V
Transmitter Dominant Voltage
VBUSdom_DRV_3
(Note 5)
VS = 18 V, Load = 500 W
-
2.0
V
Bus Input Capacitance
Pulse Response via 10 k
W,
VPULSE = 12 V, VS = Open
-
25
35
pF
BUS RECEIVE
Receiver Dominant Voltage
VBUSdom
-
0.4 *VS
-
V
Receiver Recessive Voltage
VBUSrec
-
0.6*VS
V
Center Point of Receiver
Threshold
VBUS_CNT
VBUS_CNT = (VBUSdom + VBUSrec)/2
0.487
*VS
0.5*VS
0.512*VS
V
Receiver Hysteresis
VHYS
VBUS_CNTt = (VBUSrec - VBUSdom)
-
0.16*VS
-
V
4. No production test, guaranteed by design and qualification.
5. In accordance to LIN physical layer specification 1.3.
6. In accordance to LIN physical layer specification 2.0.
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| NCV7382DR2G | 功能描述:射频收发器 ENHANCED LIN TRNSCVR RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray |
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