参数资料
| 型号： | NCV7382DR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/16页 |
| 文件大小： | 0K |
| 描述： | IC TRANSCEIVER LIN ENH 8-SOIC |
| 产品变化通告： | Product Discontinuation 21/Jun/2007 |
| 标准包装： | 2,500 |
| 类型： | 收发器 |
| 驱动器/接收器数： | 1/1 |
| 规程： | LIN |
| 电源电压： | 7 V ~ 18 V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NCV7382
http://onsemi.com
15
ESD/EMC Remarks
General Remarks
Electronic semiconductor products are sensitive to
Electro Static Discharge (ESD). Always observe Electro
Static Discharge control procedures whenever handling
semiconductor products.
ESD Test
The NCV7382 is tested according to MIL883D (human
body model).
EMC
The test on EMC impacts is done according to ISO
7637-1 for power supply pins and ISO 7637-3 for data and
signal pins.
POWER SUPPLY PIN VS
Test Pulse
Condition
Duration
1
t1 = 5.0 s/US = -100 V/tD = 2.0 ms
5000 Pulses
2
t1 = 0.5 s/US = 100 V/tD = 0.05 ms
5000 Pulses
3a/b
US = -150 V/US = 100 V
Burst 100 ns/10 ms/90 ms Break
1 h
5
Ri = 0.5 W, tD = 400 ms
tr = 0.1 ms/UP + US = 40 V
10 Pulses Every 1 Min
DATA AND SIGNAL PINS EN, BUS
Test Pulse
Condition
Duration
1
t1 = 5.0 s/US = -100 V/tD = 2.0 ms
1000 Pulses
2
t1 = 0.5 s/US = 100 V/tD = 0.05 ms
1000 Pulses
3a/b
US = -150 V/US = 100 V
Burst 100 ns/10 ms/90 ms Break
1000 Burst
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV7382DR2G | 功能描述:射频收发器 ENHANCED LIN TRNSCVR RoHS:否 制造商:Atmel 频率范围:2322 MHz to 2527 MHz 最大数据速率:2000 Kbps 调制格式:OQPSK 输出功率:4 dBm 类型: 工作电源电压:1.8 V to 3.6 V 最大工作温度:+ 85 C 接口类型:SPI 封装 / 箱体:QFN-32 封装:Tray |
| NCV7383 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:FlexRay Bus Driver |
| NCV7383DB0R2G | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:FlexRay Bus Driver |
| NCV7420 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:LIN Transceiver with 3.3V or 5 V Voltage Regulator |
| NCV7420_12 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:LIN Transceiver with 3.3V or 5 V Voltage Regulator |
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