参数资料
型号: NCV8440STT3G
厂商: ON Semiconductor
文件页数: 1/9页
文件大小: 0K
描述: MOSFET N-CH 2.6A 59V SOT-223-4
标准包装: 4,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: *
漏极至源极电压(Vdss): 59V
电流 - 连续漏极(Id) @ 25° C: 2.6A
开态Rds(最大)@ Id, Vgs @ 25° C: *
Id 时的 Vgs(th)(最大): *
闸电荷(Qg) @ Vgs: *
输入电容 (Ciss) @ Vds: *
功率 - 最大: 1.69W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 带卷 (TR)
NCV8440, NCV8440A
Protected Power MOSFET
2.6 A, 52 V, N ? Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
Features
? Diode Clamp Between Gate and Source
? ESD Protection ? Human Body Model 5000 V
? Active Over ? Voltage Gate to Drain Clamp
? Scalable to Lower or Higher R DS(on)
? Internal Series Gate Resistance
? These are Pb ? Free Devices
Benefits
? High Energy Capability for Inductive Loads
? Low Switching Noise Generation
V DSS
(Clamped)
52 V
Gate
(Pin 1)
http://onsemi.com
R DS(ON) TYP I D MAX
95 m W @ 10 V 2.6 A
Drain (Pins 2, 4)
Overvoltage
Protection
Applications
? Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
? NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
ESD Protection
Source (Pin 3)
MARKING
DIAGRAM
DRAIN
SOT ? 223
CASE 318E
STYLE 3
1 = Gate
2 = Drain
3 = Source
4
1
GATE
AYW
xxxxx G
G
2 3
SOURCE
DRAIN
A
Y
W
xxxxx
G
= Assembly Location
= Year
= Work Week
= V8440 or 8440A
= Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
November, 2011 ? Rev. 6
1
Publication Order Number:
NCV8440/D
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