参数资料
型号: NCV8508PD50R2G
厂商: ON Semiconductor
文件页数: 3/26页
文件大小: 0K
描述: IC REG LDO 5V 8SOIC-EP
标准包装: 2,500
稳压器拓扑结构: 正,固定式
输出电压: 5V
输入电压: 最高 45 V
电压 - 压降(标准): 0.45V @ 150mA
稳压器数量: 1
电流 - 限制(最小): 250mA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-SOIC(0.154",3.90mm Width)裸露焊盘
供应商设备封装: 8-SOIC-EP
包装: 带卷 (TR)
NCV8508
V IN
?
+
Charge
Pump
Internally
connected
on 7 lead
D 2 PAK
Current
Limit
V OUT
Sense
11 V
Bandgap
1.25 V
+
Thermal
RESET
WDI
Reference
?
Falling
Edge
Detect
Shutdown
Watchdog
Circuit
Delay
Timing
Circuit
Wakeup
Circuit
Wakeup
Figure 2. Block Diagram
MAXIMUM RATINGS
Rating
Input Voltage, V IN (DC)
Peak Transient Voltage (46 V Load Dump @ V IN = 14 V)
Output Voltage, V OUT
Value
? 0.3 to 45
60
? 0.3 to 18
Unit
V
V
V
ESD Susceptibility:
Logic Inputs/Outputs (RESET, WDI, Wakeup)
Operating Junction Temperature, T J
Storage Temperature Range, T S
Peak Reflow Soldering Temperature:
Human Body Model
Machine Model
Reflow: (Note 1)
2.0
150
? 0.3 to +7.0
? 40 to150
? 55 to +150
240 Peak
260 Peak (Pb ? Free)
(Note 3)
kV
V
V
° C
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 60 second maximum above 183 ° C.
2. Depending on thermal properties of substrate R q JA = R q JC + R q JCA .
3. ? 5 ° C/+0 ° C allowable conditions, applies to both Pb and Pb ? Free devices.
THERMAL CHARACTERISTICS
See Package Thermal Data Section (Page 10)
http://onsemi.com
3
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