参数资料
型号: NCV8570BMN300R2G
厂商: ON Semiconductor
文件页数: 2/20页
文件大小: 0K
描述: IC REG LDO 3V .2A 6DFN
标准包装: 1
稳压器拓扑结构: 正,固定式
输出电压: 3V
输入电压: 最高 5.5V
电压 - 压降(标准): 0.115V @ 200mA
稳压器数量: 1
电流 - 输出: 200mA
电流 - 限制(最小): 200mA
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 6-VDFN 裸露焊盘
供应商设备封装: 6-DFN(2x2.2)
包装: 标准包装
其它名称: NCV8570BMN300R2GOSDKR
NCV8570B
R DIS
R PD
Figure 2. Simplified Block Diagram
PIN FUNCTION DESCRIPTION
Pin No.
Pin No.
DFN6
1
2, 5, EPAD
3
4
6
TSOP ? 5
3
2
1
5
4
Pin Name
EN
GND
IN
OUT
BYP
Description
Enable pin: This pin allows on/off control of the regulator. To disable the device, connect to
GND. If this function is not in use, connect to Vin. Internal 5 M W Pull Down resistor is
connected between EN and GND.
Power Supply Ground (Pins are fused for the DFN6 package). Pins 2, 5 and EPAD are
connected together through the lead frame in the DFN6 package.
Power Supply Input Voltage
Regulated Output Voltage
Noise reduction pin. (Connect 10 nF or 100 nF capacitor to GND)
MAXIMUM RATINGS
Input Voltage (Note 2)
Chip Enable Voltage
Noise Reduction Voltage
Output Voltage
Output Short ? Circuit Duration
Maximum Junction Temperature
Storage Temperature Range
Rating
Symbol
IN
EN
BYP
OUT
T J(max)
T STG
Value
? 0.3 V to 6 V
? 0.3 V to V IN +0.3 V
? 0.3 V to V IN +0.3 V
? 0.3 V to V IN +0.3 V
Infinity
125
? 55 to 150
Unit
V
V
V
? C
? C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. This device series contains ESD protection and exceeds the following tests:
Human Body Model 2000 V tested per MIL ? STD ? 883, Method 3015
Machine Model Method 200 V
This device meets or exceeds AEC ? Q100 standard.
THERMAL CHARACTERISTICS
Rating
Package Thermal Resistance, DFN6: (Notes 2, 3)
Junction ? to ? Case (Pin 2)
Junction ? to ? Ambient
Package Thermal Resistance, TSOP ? 5: (Notes 2, 3)
Junction ? to ? Case (Pin 2)
Junction ? to ? Ambient
Symbol
Y JL2
R q JA
Y JL2
R q JA
Value
38
110
92
204
Unit
? C /W
? C /W
2. Refer to APPLICATION INFORMATION for Safe Operating Area
3. Single component mounted on 1 oz, FR4 PCB with 645mm 2 Cu area.
http://onsemi.com
2
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NCV8570BMN330R2G 功能描述:低压差稳压器 - LDO 200MA ULN RF LDO REG3.3V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
NCV8570BSN18T1G 功能描述:低压差稳压器 - LDO 200MA ULN RF LDO REG1.8V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
NCV8570BSN25T1G 功能描述:低压差稳压器 - LDO 200MA ULN RF LDO REG2.5V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
NCV8570BSN28T1G 功能描述:低压差稳压器 - LDO 200MA ULN RF LDO REG2.8V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20
NCV8570BSN30T1G 功能描述:低压差稳压器 - LDO 200MA ULN RF LDO REG 3V RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压(最大值):307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20