参数资料
| 型号： | NCV86601D50R2G |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/14页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 5V .15A 8-SOIC |
| 标准包装： | 2,500 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 5V |
| 输入电压： | 最高 40 V |
| 电压 - 压降（标准）： | 0.3V @ 150mA |
| 稳压器数量： | 1 |
| 电流 - 输出： | 150mA |
| 电流 - 限制（最小）： | 205mA |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 8-SOICN |
| 包装： | 带卷 (TR) |
NCV8660
ABSOLUTE MAXIMUM RATINGS
Rating
Input Voltage (IN)
Input Current
Output Voltage (OUT)
DC
Transient, t < 10 s (Note 1)
Output Current (OUT)
Storage Temperature Range
DT (Reset Delay Time Select) Voltage (Note 2)
DT (Reset Delay Time Select) Current (Note 2)
RO (Reset Output) Voltage
DC
Transient, t < 10 s
RO (Reset Output) Current
Symbol
V IN
I IN
V OUT
I OUT
T STG
V DT
I DT
V RO
I RO
Min
? 0.3
? 1.0
? 0.3
? 0.3
? 1.0
? 55
? 0.3
? 1.0
? 0.3
? 0.3
? 1.0
Max
40
?
5.5
16
Current
Limited
150
16
1.0
5.5
16
1.0
Unit
V
mA
V
mA
° C
V
mA
V
mA
ESD CAPABILITY
ESD Capability, Human Body Model (Note 3)
ESD Capability, Machine Model (Note 3)
ESD Capability, Charged Device Model (Note 3)
ESD HB
ESD MM
ESD CDM
? 2.0
? 200
? 1.0
2.0
200
1.0
kV
V
kV
THERMAL RESISTANCE
Junction ? to ? Case (Note 4)
Junction ? to ? Ambient (Note 4)
Junction ? to ? Tab (Note 4)
Junction ? to ? Ambient (Note 4)
Junction ? to ? Lead (pin 6) (Note 4)
DPAK 5
DPAK 5
DPAK 5
SOIC ? 8 FUSED
SOIC ? 8 FUSED
R q JC
R q JA
R q JT
R q JA
R q JT
15
66
4.0
104
33
° C/W
° C/W
° C/W
° C/W
° C/W
LEAD SOLDERING TEMPERATURE AND MSL
Moisture Sensitivity Level
DPAK 5
SOIC ? 8 FUSED
MSL
1
3
?
Lead Temperature Soldering: SMD style only, Reflow (Note 5)
Pb ? Free Part 60 ? 150 sec above 217 ° C, 40 sec max at peak
SLD
?
265 peak
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The output voltage must not exceed the input voltage.
2. External resistor required to minimize current to less than 1 mA when the control voltage is above 16 V.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC ? Q100 ? 002 (EIA/JESD22 ? A114)
ESD MM tested per AEC ? Q100 ? 003 (EIA/JESD22 ? A115)
ESD CDM tested per EIA/JESD22/C101, Field Induced Charge Model
4. Values represented typical steady ? state thermal performance on 1 oz. copper FR4 PCB with 1 in 2 copper area.
5. Per IPC / JEDEC J ? STD ? 020C.
OPERATING RANGE
Pin Symbol, Parameter
V IN , Input Voltage Operating Range
Junction Temperature Range
Symbol
V IN
T J
Min
4.5
? 40
Max
40
150
Unit
V
° C
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NCV86601DT33RKG | 功能描述:低压差稳压器 - LDO VERY LOW IQ W/RESET RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV86601DT50RKG | 功能描述:低压差稳压器 - LDO VERY LOW IQ W/RESET RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV86602BD33R2G | 功能描述:低压差稳压器 - LDO Fixed-1mA to 150mA RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV86602BD50R2G | 功能描述:低压差稳压器 - LDO Fixed 0.6V 1mA to 150mA RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV86602BDT33RKG | 功能描述:低压差稳压器 - LDO VERY LOW IQ LDO W RESET RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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