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参数资料
| 型号： | NCV8675DS50GEVB |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/16页 |
| 文件大小： | 0K |
| 描述： | EVAL BOARD FOR NCV8675DS50G |
| 设计资源： | NCV8675DS50GEVB Gerber Files NCV8675 EVB Schematic |
| 标准包装： | 1 |
| 每 IC 通道数： | 1 - 单 |
| 输出电压： | 5V |
| 电流 - 输出： | 350mA |
| 输入电压： | 4.5 ~ 45 V |
| 稳压器类型： | 正，固定式 |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | NCV8675 |
| 其它名称： | NCV8675DS50GEVBOS |
NCV8675
ELECTRICAL CHARACTERISTICS V in = 13.5 V, T J = ? 40 ° C to +150 ° C, unless otherwise specified
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OUTPUT
Output Voltage
5.0 V Version
Output Voltage
3.3 V Version
Output Voltage
5.0 V Version
Output Voltage
3.3 V Version
Line Regulation
Load Regulation
Dropout Voltage
5.0 V Version
Quiescent Current
Active Ground Current
D 2 PAK
DPAK
D 2 PAK
DPAK
D 2 PAK
DPAK
D 2 PAK
DPAK
V out
V out
V out
V out
D V out
Versus V in
D V out
Versus. I out
V in ? V out
I q
I G (ON)
0.1 mA ≤ I out ≤ 350 mA (Note 3)
6.0 V ≤ V in ≤ 16 V
0.1 mA ≤ I out ≤ 350 mA (Note 3)
4.5 V ≤ V in ≤ 16 V
0.1 mA ≤ I out ≤ 200 mA (Note 3)
6.0 V ≤ V in ≤ 40 V
0.1 mA ≤ I out ≤ 200 mA (Note 3)
4.5 V ≤ V in ≤ 40 V
I out = 5 mA
6.0 V ≤ V in ≤ 28 V
1.0 mA ≤ I out ≤ 350 mA (Note 3)
I out = 200 mA (Notes 3 and 4)
I out = 350 mA (Notes 3 and 4)
I out ≤ 100 m A
T J = 25 ° C
T J = ? 40 ° C to +85 ° C
T J = 125 ° C
I out = 50 mA (Note 3)
I out = 350 mA (Note 3)
4.900
4.875
3.234
3.217
4.900
4.875
3.234
3.217
? 25
? 40
?
?
5.000
5.000
3.300
3.300
5.000
5.000
3.300
3.300
5
5
215
310
34
34
54
1.8
20
5.100
5.125
3.366
3.383
5.100
5.125
3.366
3.383
+25
+40
500
600
45
50
60
3.5
40
V
V
V
V
mV
mV
mV
m A
mA
Power Supply Rejection
P SRR
V RIPPLE = 0.5 V PP , F = 100 Hz
70
%/V
Output Capacitor for Stability
5.0 V Version
3.3 V Version
C out
ESR
C out
ESR
I out = 0.1 mA to 350 mA
22
22
9
7
m F
W
m F
W
RESET TIMING D AND OUTPUT R O
Reset Switching Threshold
Reset Output Low Voltage
Reset Output Leakage Current
Reset Charging Current
Upper Timing Threshold
V out , r t
V ROL
I ROH
I D,C
V DU
5.0 V Version
3.3 V Version
R Ext > 5.0k, V out > 1.0V
V ROH = 5.0 V
V ROH = 3.3 V
V D = 1.0 V
?
4.50
2.97
?
?
?
2.0
1.2
4.65
3.069
0.20
0
0
4.0
1.3
4.80
3.168
0.40
10
10
6.5
1.4
V
V
m A
m A
V
Lower Timing Threshold
V LU
1.24
V
Reset Delay Time
Reset Reaction Time
5.0 V Version
3.3 V Version
t rd
t rr
C D = 47 nF
C D = 47 nF
10
10
16
16
1.5
22
24
4.0
m s
m s
PROTECTION
Current Limit
I out(LIM)
V out = 4.5 V (5.0 V Version)
V out = 3.0 V (3.3 V Version)
350
350
mA
Short Circuit Current Limit
Thermal Shutdown Threshold
I out(SC)
T TSD
V out = 0 V (Note 3)
(Note 5)
100
150
600
200
mA
° C
3. Use pulse loading to limit power dissipation.
4. Dropout voltage = (V in – V out ), measured when the output voltage has dropped 100 mV relative to the nominal value obtained with
V in = 13.5 V.
5. Not tested in production. Limits are guaranteed by design.
http://onsemi.com
3
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相关代理商/技术参数 |
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| NCV8675DS50R4G | 功能描述:低压差稳压器 - LDO NCV8675 RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV8675DT33RKG | 功能描述:低压差稳压器 - LDO 3.3V/350MA LDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV8675DT50RKG | 功能描述:低压差稳压器 - LDO 350 mA VERY LOW QUIESCENT CURRENTLDO RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
| NCV8702 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:200 mA, Ultra-Low Quiescent Current, Ultra-Low Noise, LDO Linear Voltage Regulator |
| NCV8702MX18TCG | 功能描述:低压差稳压器 - LDO 200 MA LDO ULTRA-LOW IQ RoHS:否 制造商:Texas Instruments 最大输入电压:36 V 输出电压:1.4 V to 20.5 V 回动电压（最大值）:307 mV 输出电流:1 A 负载调节:0.3 % 输出端数量: 输出类型:Fixed 最大工作温度:+ 125 C 安装风格:SMD/SMT 封装 / 箱体:VQFN-20 |
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