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| 型号： | NCV87722DT33RKG |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/17页 |
| 文件大小： | 0K |
| 描述： | IC REG LDO 3.3V .35A DPAK-4 |
| 标准包装： | 2,500 |
| 稳压器拓扑结构： | 正，固定式 |
| 输出电压： | 3.3V |
| 输入电压： | 4.5 V ~ 40 V |
| 稳压器数量： | 1 |
| 电流 - 输出： | 350mA |
| 电流 - 限制（最小）： | 400mA |
| 工作温度： | -40°C ~ 150°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-5，DPak（4 引线 + 接片），TO-252AD |
| 供应商设备封装： | D-Pak 5-引线 |
| 包装： | 带卷 (TR) |
NCV8772
ELECTRICAL CHARACTERISTICS V in = 13.2 V, V EN = 3 V, C in = 0.1 m F, C out = 1 m F, for typical values T J = 25 ° C, for min/max
values T J = ? 40 ° C to 150 ° C; unless otherwise noted. (Notes 9 and 10)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Unit
ENABLE THRESHOLDS
Enable Input Threshold Voltage
Logic Low
Logic High
V th(EN)
?
2.5
?
?
0.8
?
V
Enable Input Current
Logic High
Logic Low
V EN = 5 V
V EN = 0 V, T J < 85 ° C
I EN_ON
I EN_OFF
?
?
3
0.5
5
1
m A
DT (RESET DELAY TIME SELECT) ? D2PAK ? 7 ONLY
DT Threshold Voltage
Logic Low
Logic High
V th(DT)
?
2.0
?
?
0.8
?
V
DT Input Current
V DT = 5 V
I DT
?
?
1.0
m A
RESET OUTPUT RO
Input Voltage Reset Threshold
Output Voltage Reset Threshold
(Note 13)
(NCV8772y) where y = 1,2,3,...
(NCV8772y) where y = A,B,C,...
Reset Hysteresis
3.3 V
3.3 V
5.0 V
3.3 V
5.0 V
V in decreasing, V out > V RT
V out decreasing
V in > 4.5 V
V in > 5.5 V
V in > 4.5 V
V in > 5.5 V
V in_RT
V RT
V RH
?
90
90
87
87
?
3.8
93
93
90
90
2.0
4.2
96
96
93
93
?
V
%V out
%V out
Maximum Reset Sink Current
Reset Output Low Voltage
Reset Output High Voltage
3.3 V V out = 3 V, V RO = 0.25 V
5.0 V V out = 4.5 V, V RO = 0.25 V
V out > 1 V, I RO < 200 m A
5.0 V
I ROmax
V ROL
V ROH
1.3
1.75
?
4.5
?
?
0.15
?
?
?
0.25
?
mA
V
V
Reset High Level Leakage Current
3.3 V
I ROLK
?
?
1.0
m A
Integrated Reset Pull ? up Resistor
5.0 V
R RO
15
30
50
k W
Reset Delay Time (DPAK ? 5, D2PAK ? 5) Min Available Time
(Note 13) Max Available Time
t RD
6.4
102.4
(20%)
8.0
128
9.6
153.6
(20%)
ms
Reset Delay Time (D2PAK ? 7)
(Note 13)
Reset Reaction Time (see Figure 33)
Min Available Time, DT connected to GND
Max Available Time, DT connected to V out
t RD
t RR
3.2
102.4
(20%)
16
4.0
128
25
4.8
153.6
(20%)
38
ms
m s
THERMAL SHUTDOWN
Thermal Shutdown Temperature
(Note 12)
Thermal Shutdown Hysteresis
(Note 12)
T SD
T SH
150
?
175
25
195
?
° C
° C
9. Refer to ABSOLUTE MAXIMUM RATINGS and APPLICATION INFORMATION for Safe Operating Area.
10. Performance guaranteed over the indicated operating temperature range by design and/or characterization tested at T A [ T J . Low duty
cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
11. Measured when output voltage falls 100 mV below the regulated voltage at V in = 13.2 V.
12. Values based on design and/or characterization.
13. See APPLICATION INFORMATION section for Reset Thresholds and Reset Delay Time Options
http://onsemi.com
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