型号: | NDB7061/L86Z |
厂商: | NATIONAL SEMICONDUCTOR CORP |
元件分类: | JFETs |
英文描述: | 64 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
文件页数: | 5/6页 |
文件大小: | 159K |
代理商: | NDB7061/L86Z |
相关PDF资料 |
PDF描述 |
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NDC7002N/S62Z | 510 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
NDS352AP/D87Z | 900 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB |
NDS9407/D84Z | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
NDS9407/L99Z | 3000 mA, 60 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
NDS9925A | 20 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
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NDB708A | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
NDB708AE | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
NDB708B | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
NDB708BE | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor |
NDB710A | 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |