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| 型号： | NDC7002N_SB9G007 |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 50V 6-SSOT |
| 产品变化通告： | Mold Compound Change 07/Dec/2007 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 510mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 2 欧姆 @ 510mA，10V |
| Id 时的 Vgs(th)（最大）： | 2.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 20pF @ 25V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 带卷 (TR) |
March 1996
NDC7002N
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This
very high density process has been designed to minimize
on-state resistance, provide rugged and reliable
performance and fast switching. These devices is
particularly suited for low voltage applications requiring a
Features
0.51A, 50V, R DS(ON) = 2 ? @ V GS =10V
High density cell design for low R DS(ON) .
Proprietary SuperSOT TM -6 package design using copper
lead frame for superior thermal and electrical capabilities.
High saturation current .
low current high side switch.
____________________________________________________________________________________________
SOT-6 (SuperSOT TM -6)
Absolute Maximum Ratings T A = 25°C unless otherwise noted
4
5
6
3
2
1
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage - Continuous
NDC7002N
50
20
Units
V
V
I D
Drain Current - Continuous
(Note 1a)
0.51
A
- Pulsed
1.5
P D
Maximum Power Dissipation
(Note 1a)
0.96
W
(Note 1b)
(Note 1c)
0.9
0.7
T J ,T STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
°C/W
°C/W
? 1997 Fairchild Semiconductor Corporation
NDC7002N.SAM
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相关代理商/技术参数 |
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| NDC7003P | 功能描述:MOSFET Dual P-Ch FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDC7003P_Q | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NDC-L | 制造商:RRE 制造商全称:RRE 功能描述:Standard Magnets |
| NDC-M | 制造商:RRE 制造商全称:RRE 功能描述:Standard Magnets |
| NDC-S | 制造商:RRE 制造商全称:RRE 功能描述:Standard Magnets |
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