- 您现在的位置：买卖IC网 > Datasheet目录483 > NDC7003P (Fairchild Semiconductor)MOSFET 2P-CH 60V 340MA SSOT6 Datasheet资料下载
参数资料
| 型号： | NDC7003P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2P-CH 60V 340MA SSOT6 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Design/Process Change 11/May/2007 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 340mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 340mA，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 66pF @ 25V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | NDC7003PDKR |
May 2002
NDC7003P
Dual P-Channel PowerTrench ? MOSFET
General Description
Features
These dual P-Channel Enhancement Mode Power Field
Effect Transistors are produced using Fairchild’s
proprietary Trench Technology. This very high density
? –0.34A, –60 V.
R DS(ON) = 5 ? @ V GS = –10 V
R DS(ON) = 7 ? @ V GS = –4.5 V
process has been designed to minimize on-state
resistance, provide rugged and reliable performance
and fast switching. This product is particularly suited to
low voltage applications requiring a low current high
? Low gate charge
? Fast switching speed
side switch.
? High performance trench technology for low R DS(ON)
? SuperSOT TM -6 package: small footprint (72%
smaller than standard SO-8); low profile (1mm thick)
D2
D1
S1
4
5
3
2
SuperSOT
TM
-6
G1
S2
G2
6
1
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
–60
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1a)
–0.34
A
– Pulsed
–1
P D
Power Dissipation for Single Operation
(Note 1a)
0.96
W
(Note 1b)
(Note 1c)
0.9
0.7
T J , T STG
Operating and Storage Junction Temperature Range
–55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
° C/W
Package Marking and Ordering Information
Device Marking
.03P
Device
NDC7003P
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2002 Fairchild Semiconductor Corporation
NDC7003P Rev B(W)
相关PDF资料 |
PDF描述 |
|---|---|
| NDD03N50ZT4G | MOSFET N-CH 500V 2.6A DPAK |
| NDD04N50Z-1G | MOSFET N-CH 500V 3A IPAK |
| NDD05N50ZT4G | MOSFET N-CH 500V 5A DPAK |
| NDF02N60ZH | MOSFET N CH 600V 2.4A TO220FP |
| NDF03N60ZH | MOSFET N CH 600V 4.8A TO220FP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NDC7003P_Q | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NDC-L | 制造商:RRE 制造商全称:RRE 功能描述:Standard Magnets |
| NDC-M | 制造商:RRE 制造商全称:RRE 功能描述:Standard Magnets |
| NDC-S | 制造商:RRE 制造商全称:RRE 功能描述:Standard Magnets |
| NDC-T | 制造商:RRE 制造商全称:RRE 功能描述:Standard Magnets |
发布紧急采购，3分钟左右您将得到回复。