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| 型号： | NDC7003P |
| 厂商： | Fairchild Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2P-CH 60V 340MA SSOT6 |
| 产品培训模块： | High Voltage Switches for Power Processing SMPS Power Switch |
| 产品变化通告： | Design/Process Change 11/May/2007 Mold Compound Change 08/April/2008 |
| 产品目录绘图： | MOSFET SuperSOT-6 |
| 标准包装： | 1 |
| 系列： | PowerTrench® |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 340mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 5 欧姆 @ 340mA，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 2.2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 66pF @ 25V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-23-6 细型，TSOT-23-6 |
| 供应商设备封装： | 6-SSOT |
| 包装： | 标准包装 |
| 产品目录页面： | 1603 (CN2011-ZH PDF) |
| 其它名称： | NDC7003PDKR |
Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV DSS
? BV DSS
? T J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
V GS = 0 V, I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
–60
–57
V
mV/ ° C
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate–Body Leakage,
V DS = –48 V,
V GS = ± 20 V,
V GS = 0 V
V DS = 0 V
–1
± 100
μ A
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
V DS = V GS , I D = –250 μ A
I D = –250 μ A, Referenced to 25 ° C
V GS = –10 V, I D = –0.34 A
–1
–1.9
3.2
1.2
–3.5
5
V
mV/ ° C
?
On–Resistance
V GS = –4.5 V, I D = –0.25 A
V GS = –10 V,I D = –0.34 A, T J =125 ° C
1.5
1.9
7.5
10
I D(on)
On-State Drain Current
V GS = –10 V V DS = –10 V
–1
A
g FS
Forward Transconductance
V DS = –10 V,
I D = –0.34 A
700
mS
Dynamic Characteristics
C iss
C oss
C rss
R G
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V DS = –25 V,
f = 1.0 MHz
V GS = 15mV,
V GS = 0 V,
f = 1.0 MHz
66
13
6
11.2
pF
pF
pF
?
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
V DD = –25 V,
V GS = –10 V,
V DS = –25 V,
V GS = –10 V
I D = –1 A,
R GEN = 6 ?
I D = –0.34 A,
3.2
10
8
1
1.6
0.3
6.4
20
16
2
2.2
ns
ns
ns
ns
nC
nC
Q gd
Gate–Drain Charge
0.3
nC
Drain–Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain–Sourc e Diode Forward Current
– 0.34
A
V SD
Drain–Source Diode Forward
Voltage
V GS = 0 V, I S = –0.34 A (Note 2)
–0.8
–1.4
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R θ JC is guaranteed by design while R θ CA is determined by the user's board design.
on a .005 in pad of 2 oz
a) 130 ° C/W when
mounted on a 0.125
in 2 pad of 2 oz.
copper.
b) 140°C/W when mounted
2
copper
c) 180°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 μ s, Duty Cycle < 2.0%
NDC7003P Rev B(W)
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相关代理商/技术参数 |
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| NDC7003P_Q | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NDC-L | 制造商:RRE 制造商全称:RRE 功能描述:Standard Magnets |
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| NDC-S | 制造商:RRE 制造商全称:RRE 功能描述:Standard Magnets |
| NDC-T | 制造商:RRE 制造商全称:RRE 功能描述:Standard Magnets |
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