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| 型号： | NDD02N60Z-1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 600V IPAK |
| 产品目录绘图： | MOSFET IPAK-3 |
| 标准包装： | 75 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 标准 |
| 漏极至源极电压(Vdss)： | 600V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 4.8 欧姆 @ 1A，10V |
| Id 时的 Vgs(th)（最大）： | 4.5V @ 50µA |
| 闸电荷(Qg) @ Vgs： | 10.1nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 274pF @ 25V |
| 功率 - 最大： | 57W |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-251-3 短引线，IPak，TO-251AA |
| 供应商设备封装： | I-Pak |
| 包装： | 管件 |
| 其它名称： | NDD02N60Z-1G-ND NDD02N60Z-1GOS |
NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET
600 V, 4.8 W
Features
? Low ON Resistance
? Low Gate Charge
? ESD Diode ? Protected Gate
? 100% Avalanche Tested
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
V DSS
600 V
http://onsemi.com
R DS(on) (MAX) @ 1 A
4.8 W
Rating
Drain ? to ? Source Voltage
Continuous Drain Current R q JC
(Note 1)
Continuous Drain Current R q JC
T A = 100 ° C (Note 1)
Pulsed Drain Current, V GS @ 10 V
Power Dissipation R q JC
Gate ? to ? Source Voltage
Symbol
V DSS
I D
I D
I DM
P D
V GS
NDF
2.4
1.6
10
24
600
± 30
NDD
2.2
1.4
9
57
Unit
V
A
A
A
W
V
G (1)
N ? Channel
D (2)
S (3)
Single Pulse Avalanche Energy,
I D = 2.4 A
ESD (HBM)
(JESD 22 ? A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H. ≤ 30%,
T A = 25 ° C) (Figure 17)
Peak Diode Recovery (Note 2)
E AS
V esd
V ISO
dv/dt
120
2500
4500
4.5
mJ
V
V
V/ns
3
3
Continuous Source Current (Body
Diode)
Maximum Temperature for Soldering
Leads
Operating Junction and
I S
T L
T J , T stg
2.4
260
? 55 to 150
A
° C
° C
1
2
NDF02N60ZG
TO ? 220FP
CASE 221D
1
2
NDF02N60ZH
TO ? 220FP
CASE 221AH
Storage Temperature Range
3
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Limited by maximum junction temperature
2. I SD = 2.4 A, di/dt ≤ 100 A/ m s, V DD ≤ BV DSS , T J = +150 ° C
4
1
2
NDD02N60Z ? 1G
IPAK
CASE 369D
4
1 2
3
NDD02N60ZT4G
DPAK
CASE 369AA
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 7 of this data sheet.
? Semiconductor Components Industries, LLC, 2013
July, 2013 ? Rev. 7
1
Publication Order Number:
NDF02N60Z/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NDD02N60ZT4G | 功能描述:MOSFET NFET IPAK 600V 2.2A 4.8R RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDD03N50Z | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 500 V, 3.3 |
| NDD03N50Z-1G | 功能描述:MOSFET 500V 2.6A HVFET IPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDD03N50ZT4G | 功能描述:MOSFET 500V 2.6A HVFET DPAK RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NDD03N60Z | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:N-Channel Power MOSFET 600 V, 3.3 |
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