参数资料
型号: NDS7002A_D87Z
厂商: Fairchild Semiconductor
文件页数: 4/7页
文件大小: 0K
描述: MOSFET N-CH 60V 280MA SOT-23
产品变化通告: Mold Compound Change 12/Dec/2007
Product Discontinuation 03/Dec/2009
标准包装: 10,000
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 60V
电流 - 连续漏极(Id) @ 25° C: 280mA
开态Rds(最大)@ Id, Vgs @ 25° C: 2 欧姆 @ 500mA,10V
Id 时的 Vgs(th)(最大): 2.5V @ 250µA
输入电容 (Ciss) @ Vds: 50pF @ 25V
功率 - 最大: 300mW
安装类型: 表面贴装
封装/外壳: TO-236-3,SC-59,SOT-23-3
供应商设备封装: SOT-23
包装: 带卷 (TR)
Typical Electrical Characteristics
2N7000 / 2N7002 / NDS7002A
2
3
V GS = 10V
9.0
8.0
7.0
2 .5
V GS =4.0V
4 .5
5 .0
1 .5
1
6.0
2
6 .0
7 .0
5.0
1 .5
8 .0
9 .0
10
0 .5
4.0
1
0
0
1
2
3
4
3.0
5
0 .5
0
0 .4
0 .8
1 .2
1 .6
2
V DS , DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
2
V GS = 10V
I D , DRA IN CURRENT (A)
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current
3
V GS = 10V
1.75
I D = 500m A
2 .5
1.5
1.25
1
0.75
2
1 .5
1
0 .5
T J = 1 2 5 ° C
25°C
-55°C
0.5
-5 0
-2 5
0
25
50
75
100
125
150
0
0
0 .4
0 .8
1 .2
1 .6
2
2
T J , JUNCTION T EMPERATURE (°C)
Figure 3. On-Resistance Variation
with Temperature
I D , DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Drain
Current and Temperature
1 .1
1.6
V DS = 10V
T J = -55°C
25°C
125°C
1 .0 5
V DS = V GS
I D = 1 mA
1
1.2
0 .9 5
0.8
0 .9
0.4
0 .8 5
0
0
2
4
6
8
10
0 .8
-50
-25
0
25
50
75
100
125
150
V
GS
, GATE TO SOURCE VOLTAGE (V)
T J , JUNCTION TEM PERATURE (°C)
Figure 5. Transfer Characteristics
Figure 6. Gate Threshold Variation with
Temperature
2N7000.SAM Rev. A1
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