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参数资料
| 型号： | NE3512S02-T1C-A |
| 厂商： | CEL |
| 文件页数： | 7/8页 |
| 文件大小： | 296K |
| 描述： | HJ-FET NCH 13.5DB S02 |
| 标准包装： | 2,000 |
| 晶体管类型： | HFET |
| 频率： | 12GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 2V |
| 额定电流： | 70mA |
| 噪音数据： | 0.35dB |
| 电流 - 测试： | 10mA |
| 电压 - 额定： | 4V |
| 封装/外壳： | 4-SMD，扁平引线 |
| 供应商设备封装： | S02 |
| 包装： | 带卷 (TR) |
Data Sheet PG10592EJ01V0DS
7
NE3512S02
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under
the following recommended conditions. For soldering
methods and conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Soldering Conditions
Condition Symbol
Infrared Reflow
Peak temperature (package surface temperature)
: 260?C or below
Time at peak temperature
: 10 seconds or less
Time at temperature of 220?C or higher
: 60 seconds or less
Preheating time at 120 to 180?C
: 120?30 seconds
Maximum number of reflow processes
: 3 times
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
IR260
Partial Heating
Peak temperature (terminal
temperature)
: 350?C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass)
: 0.2%(Wt.) or below
HS350
Caution
Do not use different soldering methods together (except for partial heating).
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE3512S02-T1D | 制造商:CEL 制造商全称:CEL 功能描述:HETERO JUNCTION FIELD EFFECT TRANSISTOR |
| NE3512S02-T1D-A | 功能描述:射频GaAs晶体管 SUPER Lo Noise PseudomorpHIc HJ FET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS（最大值/最小值）:4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: |
| NE3513M04 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain |
| NE3513M04-A | 制造商:California Eastern Laboratories (CEL) 功能描述:IC HJ-FET RF N-CH LNA M04 4SMD |
| NE3513M04-T2 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain |
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