参数资料
型号: NE3514S02-A
厂商: CEL
文件页数: 8/8页
文件大小: 279K
描述: HJ-FET NCH 10DB S02
产品目录绘图: NEx5 Series
标准包装: 1
晶体管类型: HFET
频率: 20GHz
增益: 10dB
电压 - 测试: 2V
额定电流: 70mA
噪音数据: 0.75dB
电流 - 测试: 10mA
电压 - 额定: 4V
封装/外壳: 4-SMD,扁平引线
供应商设备封装: S02
包装: 散装
产品目录页面: 577 (CN2011-ZH PDF)
8
Data Sheet PG10593EJ01V0DS
NE3514S02
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the
following points.
? Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
? Do not burn, destroy, cut, crush, or chemically dissolve the product.
? Do not lick the product or in any way allow it to enter the mouth.
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相关代理商/技术参数
参数描述
NE3514S02-T1B-A 制造商:Renesas Electronics Corporation 功能描述:RF SMALL SIGNAL TRANSISTOR HFET
NE3514S02-T1C 制造商:CEL 制造商全称:CEL 功能描述:K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE3514S02-T1C-A 功能描述:射频GaAs晶体管 SUPER Lo Noise PseudomorpHIc HJ FET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体:
NE3514S02-T1D 制造商:CEL 制造商全称:CEL 功能描述:K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NE3514S02-T1D-A 功能描述:射频GaAs晶体管 SUPER Lo Noise PseudomorpHIc HJ FET RoHS:否 制造商:TriQuint Semiconductor 技术类型:pHEMT 频率:500 MHz to 3 GHz 增益:10 dB 噪声系数: 正向跨导 gFS(最大值/最小值):4 S 漏源电压 VDS: 闸/源击穿电压:- 8 V 漏极连续电流:3 A 最大工作温度:+ 150 C 功率耗散:10 W 安装风格: 封装 / 箱体: