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参数资料
| 型号： | NE3520S03-T1C-A |
| 厂商： | CEL |
| 文件页数： | 3/10页 |
| 文件大小： | 474K |
| 描述： | FET RF HFET 20GHZ 2V 10MA S03 |
| 标准包装： | 2,000 |
| 晶体管类型： | HFET |
| 频率： | 20GHz |
| 增益： | 13.5dB |
| 电压 - 测试： | 2V |
| 额定电流： | 70mA |
| 噪音数据： | 0.65dB |
| 电流 - 测试： | 10mA |
| 电压 - 额定： | 4V |
| 封装/外壳： | S03 |
| 供应商设备封装： | S03 |
| 包装： | 带卷 (TR) |
NE3520S03
R09DS0029EJ0100 Rev.1.00 Page 2 of 8
Oct 18, 2011
RECOMMENDED OPERATING RANGE (TA
= +25
°C, unless otherwise specified)
Parameter Symbol MIN.
TYP. MAX. Unit
Drain to Source Voltage VDS
+1 +2 +3 V
Drain Current ID
5 10 15 mA
Input Power Pin
– – 0 dBm
ELECTRICAL CHARACTERISTICS (TA
= +25
°C, unless otherwise specified)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Gate to Source Leak Current IGSO
V
GS
= –3.0 V – 0.5 10
μA
Saturated Drain Current IDSS
V
DS
= 2 V, V
GS
= 0 V 25 40 70 mA
Gate to Source Cut-off Voltage VGS (off)
V
DS
= 2 V, I
D
= 100
μA –0.2 –0.7 –1.3 V
Transconductance gm VDS
= 2 V, I
D
= 10 mA 50 65 – mS
Noise Figure NF – 0.65 0.90 dB VDS
= 2 V, I
D
= 10 mA, f = 20 GHz
Associated Gain Ga
11.5 13.5 – dB
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相关代理商/技术参数 |
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|---|---|
| NE3520S03-T1D | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
| NE3521M04 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
| NE3521M04-T2 | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
| NE3521M04-T2-A | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
| NE3521M04-T2B | 制造商:RENESAS 制造商全称:Renesas Technology Corp 功能描述:N-Channel GaAs HJ-FET, K Band Low Noise and High-Gain |
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