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| 型号： | NE5511279A-T1-A |
| 厂商： | CEL |
| 文件页数： | 1/6页 |
| 文件大小： | 372K |
| 描述： | MOSFET LD N-CHAN 7.5V 79A |
| 标准包装： | 1 |
| 晶体管类型： | LDMOS |
| 频率： | 900MHz |
| 增益： | 15dB |
| 电压 - 测试： | 7.5V |
| 额定电流： | 3A |
| 电流 - 测试： | 400mA |
| 功率 - 输出： | 40dBm |
| 电压 - 额定： | 20V |
| 封装/外壳： | 79A |
| 供应商设备封装： | 79A |
| 包装： | 标准包装 |
| 其它名称： | NE5511279A-T1-ADKR |
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
SILICON POWER MOS FET
NE5511279A
7.5 V OPERATION SILICON RF POWER LD-MOS FET
FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS
Document No. PU10322EJ01V0DS (1st edition)
Date Published June 2003 CP(K)
DESCRIPTION
The NE5511279A is an N-channel silicon power laterally
diffused MOS
FET specially designed as the
transmission
power amplifier for 7.5 V Radio Systems. Dies are manufactured
using our
NEWMOS1
technology
and housed in a surface mount
package.
This device can deliver 40.0
dBm output power with
48% power added
efficiency at 900
MHz under the 7.5 V
supply voltage.
FEATURES
?
High output power
: Pout
= 40.0 dBm TYP. (f = 900 MHz, VDS
= 7.5 V, Pin
= 27 dBm, IDset
= 400 mA)
: Pout
= 40.5 dBm TYP.
(f = 460 MHz, VDS
= 7.5 V, Pin
= 25 dBm, IDset
= 400 mA)
?
High power added efficiency
: ?add
= 48% TYP. (f = 900 MHz, VDS
= 7.5 V, Pin
= 27 dBm, IDset
= 400 mA)
: ?add
= 50% TYP. (f = 460 MHz, VDS
= 7.5 V, Pin
= 25 dBm, IDset
= 400 mA)
?
High linear gain
: GL
= 15.0 dB TYP. (f = 900 MHz, VDS
= 7.5 , Pin
= 5 dBm V, IDset
= 400 mA)
: GL
= 18.5 dB TYP. (f = 460 MHz, VDS
= 7.5 V, Pin
= 5 dBm, IDset
= 400 mA)
?
Surface mount package
: 5.7 ?
5.7 ?
1.1 mm MAX.
?
Single supply
: VDS
= 2.8 to 8.0 V
APPLICATIONS
?
460 MHz Radio Systems
?
900 MHz Radio Systems
ORDERING INFORMATION
Part Number
Package
Marking
Supplying Form
NE5511279A-T1
79A
W3
? 12 mm wide embossed taping
? Gate pin face the perforation side of the tape
? Qty 1 kpcs/reel
NE5511279A-T1A
? 12 mm wide embossed taping
? Gate pin face the perforation side of the tape
? Qty 5 kpcs/reel
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE5511279A-A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE5511279A-T1A-A | 制造商:CEL 制造商全称:CEL 功能描述:7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
| NE5512 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual high-performance operational amplifier |
| NE5512D | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual high-performance operational amplifier |
| NE5512N | 制造商:NXP Semiconductors 功能描述:Operational Amplifier, Dual AMP, Bipolar, 8 Pin, Plastic, DIP |
| NE5514 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Quad high-performance operational amplifier |
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