参数资料
| 型号： | NE5517DR2 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/15页 |
| 文件大小： | 0K |
| 描述： | IC AMP XCONDUCTANCE DUAL 16-SOIC |
| 产品变化通告： | Product Obsolescence 11/Feb/2009 |
| 标准包装： | 2,500 |
| 放大器类型： | 跨导 |
| 电路数： | 2 |
| 输出类型： | 推挽式 |
| 转换速率： | 50 V/µs |
| 增益带宽积： | 2MHz |
| 电流 - 输入偏压： | 400nA |
| 电压 - 输入偏移： | 400µV |
| 电流 - 电源： | 2.6mA |
| 电流 - 输出 / 通道： | 650µA |
| 电压 - 电源，单路/双路(±)： | 4 V ~ 44 V，±2 V ~ 22 V |
| 工作温度： | 0°C ~ 70°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.154"，3.90mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 带卷 (TR) |
Semiconductor Components Industries, LLC, 2013
June, 2013 Rev. 4
1
Publication Order Number:
NE5517/D
NE5517, NE5517A, AU5517
Dual Operational
Transconductance Amplifier
The AU5517 and NE5517 contain two current-controlled
transconductance amplifiers, each with a differential input and
push-pull output. The AU5517/NE5517 offers significant design and
performance advantages over similar devices for all types of
programmable gain applications. Circuit performance is enhanced
through the use of linearizing diodes at the inputs which enable a
10 dB signal-to-noise improvement referenced to 0.5% THD. The
AU5517/NE5517 is suited for a wide variety of industrial and
consumer applications.
Constant impedance of the buffers on the chip allow general use of
the AU5517/NE5517. These buffers are made of Darlington
transistors and a biasing network that virtually eliminate the change of
offset voltage due to a burst in the bias current IABC, hence eliminating
the audible noise that could otherwise be heard in high quality audio
applications.
Features
Constant Impedance Buffers
DVBE of Buffer is Constant with Amplifier IBIAS Change
Excellent Matching Between Amplifiers
Linearizing Diodes
High Output Signal-to-Noise Ratio
PbFree Packages are Available*
Applications
Multiplexers
Timers
Electronic Music Synthesizers
Dolby HX Systems
Current-Controlled Amplifiers, Filters
Current-Controlled Oscillators, Impedances
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
PIN CONNECTIONS
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
ORDERING INFORMATION
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2
3
4
5
6
7
8
9
10
11
12
13
14
16
15
IABCa
Da
+INa
INa
VOa
V
INBUFFERa
VOBUFFERa
IABCb
Db
+INb
INb
VOb
V+
INBUFFERb
VOBUFFERb
N, D Packages
(Top View)
PDIP16
N SUFFIX
CASE 648
1
SOIC16
D SUFFIX
CASE 751B
1
MARKING
DIAGRAMS
NE5517yy
AWLYYWWG
xx
= AU or NE
yy
= AN or N
A
= Assembly Location
WL
= Wafer Lot
YY, Y = Year
WW = Work Week
G
= PbFree Package
xx5517DG
AWLYWW
1
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NE5517DR2G | 功能描述:跨导放大器 Transconductance Dual Commercial Temp RoHS:否 制造商:Texas Instruments 通道数量:1 封装 / 箱体:SOIC-14 带宽: 输入补偿电压:40 mV at +/- 5 V 电源电压-最大:+/- 5 V 电源电流: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装:Tube |
| NE5517D-T | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Transconductance Operational Amplifier |
| NE5517N | 功能描述:跨导放大器 Transconductance RoHS:否 制造商:Texas Instruments 通道数量:1 封装 / 箱体:SOIC-14 带宽: 输入补偿电压:40 mV at +/- 5 V 电源电压-最大:+/- 5 V 电源电流: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装:Tube |
| NE5517NG | 功能描述:跨导放大器 Transconductance Dual Commercial Temp RoHS:否 制造商:Texas Instruments 通道数量:1 封装 / 箱体:SOIC-14 带宽: 输入补偿电压:40 mV at +/- 5 V 电源电压-最大:+/- 5 V 电源电流: 最大工作温度:+ 85 C 最小工作温度:- 40 C 封装:Tube |
| NE5520279A | 功能描述:射频MOSFET电源晶体管 L/S Band Med Power RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶体管极性: 频率:1800 MHz to 2000 MHz 增益:27 dB 输出功率:100 W 汲极/源极击穿电压: 漏极连续电流: 闸/源击穿电压: 最大工作温度: 封装 / 箱体:NI-780-4 封装:Tray |
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